CGHV35150F

Mfr. #:: CGHV35150F
Manufacturer:: N/A
Description:: RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt
Lifecycle:: New from this manufacturer.
Datasheet:: CGHV35150F Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: CGHV35150F more Information

Product Attribute
Attribute Value

Manufacturer:: Cree, Inc.

Product Category:: RF JFET Transistors

RoHS:: Y

Transistor Type:: HEMT

Technology:: GaN

Gain:: 15 dB

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 120 V

Vgs - Gate-Source Breakdown Voltage:: - 10 V to 2 V

Id - Continuous Drain Current:: 4.5 A

Output Power:: 45 W

Maximum Drain Gate Voltage:: -

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: -

Mounting Style:: Screw Mount

Package / Case:: 440193

Packaging:: Tray

Application:: -

Configuration:: Single

Height:: 4.19 mm

Length:: 20.46 mm

Operating Frequency:: 2 GHz to 4 GHz

Operating Temperature Range:: -

Product:: GaN HEMT

Width:: 5.97 mm

Brand:: Wolfspeed / Cree

Forward Transconductance - Min:: -

Gate-Source Cutoff Voltage:: -

Class:: -

Development Kit:: CGH40035F-TB

Fall Time:: -

NF - Noise Figure:: -

P1dB - Compression Point:: -

Product Type:: RF JFET Transistors

Rds On - Drain-Source Resistance:: -

Rise Time:: -

Factory Pack Quantity:: 120

Subcategory:: Transistors

Typical Turn-Off Delay Time:: -

Vgs th - Gate-Source Threshold Voltage:: - 3 V

Tags: CGHV3515, CGHV351, CGHV35, CGHV3, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV35150F Description

***i-Key: FET RF 125V 3.5GHZ 440193

CGHV35150F More Information

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

Part #	Mfg.	Description	Stock	Price
CGHV35150F DISTI # CGHV35150F-ND	Wolfspeed	RF MOSFET HEMT 50V 440193 RoHS: Compliant Min Qty: 1 Container: Tube	14In Stock	1:$364.8000
CGHV35150-TB DISTI # CGHV35150-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV35150F RoHS: Compliant Min Qty: 1 Container: Bulk	3In Stock	1:$550.0000
CGHV35150F DISTI # 941-CGHV35150F	Cree, Inc.	RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt RoHS: Compliant	46	1:$364.8000
CGHV35150F DISTI # CGHV35150F	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	1:$364.8000

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Availability

Stock:: 40
On Order:: 2023
Enter Quantity:

Current price of CGHV35150F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$341.83~~; ~~$341.83~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

CGHV3515 3
CGHV351 4
CGHV35 7
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CGHV 89
CGH 418

CGHV35150F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes