CGHV351

CGHV35150F vs CGHV35150-TB

 
PartNumberCGHV35150FCGHV35150-TB
DescriptionRF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 WattRF Development Tools Test Board without GaN HEMT
ManufacturerCree, Inc.Cree, Inc.
Product CategoryRF JFET TransistorsRF Development Tools
RoHSYN
Transistor TypeHEMT-
TechnologyGaN-
Gain15 dB-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage120 V-
Vgs Gate Source Breakdown Voltage- 10 V to 2 V-
Id Continuous Drain Current4.5 A-
Output Power45 W-
Maximum Drain Gate Voltage--
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation--
Mounting StyleScrew Mount-
Package / Case440193-
PackagingTrayBulk
Application--
ConfigurationSingle-
Height4.19 mm-
Length20.46 mm-
Operating Frequency2 GHz to 4 GHz-
Operating Temperature Range--
ProductGaN HEMTDemonstration Boards
Width5.97 mm-
BrandWolfspeed / CreeWolfspeed / Cree
Forward Transconductance Min--
Gate Source Cutoff Voltage--
Class--
Development KitCGH40035F-TB-
Fall Time--
NF Noise Figure--
P1dB Compression Point--
Product TypeRF JFET TransistorsRF Development Tools
Rds On Drain Source Resistance--
Rise Time--
Factory Pack Quantity1202
SubcategoryTransistorsDevelopment Tools
Typical Turn Off Delay Time--
Vgs th Gate Source Threshold Voltage- 3 V-
Type-RF Transistors
Tool Is For Evaluation Of-CGHV35150
Frequency-2.9 GHz to 3.5 GHz
Operating Supply Voltage--
Description/Function-Demonstration board for CGHV35150
Dimensions--
Interface Type--
For Use With-CGHV35150
Manufacturer Part # Description RFQ
N/A
N/A
CGHV35150F RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt
CGHV35150-TB RF Development Tools Test Board without GaN HEMT
CGHV35150-TB TEST FIXTURE FOR CGHV35150F
CGHV35150F RF MOSFET HEMT 50V 440193
CGHV3510F New and Original
CGHV35150 New and Original
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