CGHV3

CGHV35060MP vs CGHV31500F vs CGHV31500F-TB

 
PartNumberCGHV35060MPCGHV31500FCGHV31500F-TB
DescriptionRF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 WattRF MOSFET HEMT 50V 440217TEST FIXTURE FOR CGHV31500F
ManufacturerCree, Inc.--
Product CategoryRF JFET Transistors--
RoHSY--
Transistor TypeHEMT--
TechnologyGaN--
Gain14.5 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Vgs Gate Source Breakdown Voltage- 10 V, 2 V--
Id Continuous Drain Current10.4 A--
Output Power75 W--
Maximum Drain Gate Voltage50 V--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 107 C--
Pd Power Dissipation52 W--
Mounting StyleSMD/SMT--
PackagingReel--
ApplicationS Band Radar and LTE base stations--
ConfigurationSingle--
Operating Frequency3.5 GHz--
Operating Temperature Range- 40 C to + 107 C--
BrandWolfspeed / Cree--
Product TypeRF JFET Transistors--
Factory Pack Quantity250--
SubcategoryTransistors--
Vgs th Gate Source Threshold Voltage- 3 V--
Manufacturer Part # Description RFQ
N/A
N/A
CGHV35150F RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt
CGHV35400F RF JFET Transistors GaN HEMT 2.9-3.5GHz, 400 Watt
CGHV35060MP RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt
CGHV35150-TB RF Development Tools Test Board without GaN HEMT
CGHV31500F RF MOSFET HEMT 50V 440217
CGHV31500F-TB TEST FIXTURE FOR CGHV31500F
CGHV35150-TB TEST FIXTURE FOR CGHV35150F
CGHV35400F-TB TEST FIXTURE FOR CGHV35400F
CGHV35150F RF MOSFET HEMT 50V 440193
CGHV35400F RF MOSFET HEMT 45V 440210
CGHV35060MP RF MOSFET HEMT 50V 20TSSOP
CGHV3510F New and Original
CGHV35150 New and Original
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