IPD50P03P4L-11

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PG-TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

50 A

Rds On - Drain-Source Resistance:

10.5 mOhms

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

42 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

58 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

OptiMOS

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Series:

OptiMOS-P2

Transistor Type:

1 P-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Fall Time:

14 ns

Product Type:

MOSFET

Rise Time:

3 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

45 ns

Typical Turn-On Delay Time:

7 ns

Part # Aliases:

IPD50P03P4L11ATMA1 IPD5P3P4L11XT SP000396290

Unit Weight:

0.139332 oz

Tags

IPD50P03, IPD50P, IPD50, IPD5, IPD