2N5115e3

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

JFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-18-3

Transistor Polarity:

P-Channel

Configuration:

Single

Vds - Drain-Source Breakdown Voltage:

30 V

Vgs - Gate-Source Breakdown Voltage:

30 V

Drain-Source Current at Vgs=0:

- 15 mA to - 60 mA

Rds On - Drain-Source Resistance:

100 Ohms

Pd - Power Dissipation:

500 mW

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Packaging:

Bulk

Brand:

Microchip / Microsemi

Gate-Source Cutoff Voltage:

3 V to 6 V

Maximum Drain Gate Voltage:

30 V

Product Type:

JFETs

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

2N5115, 2N511, 2N51, 2N5