PartNumber | 2N5109 | 2N5109UB | 2N5114 |
Description | Bipolar Transistors - BJT NPN Wide Bd AM | Bipolar Transistors - BJT | JFET JFET P-Channel -40V 50mA 500mW 3mW |
Manufacturer | Central Semiconductor | Microchip | InterFET |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | JFET |
RoHS | Y | N | Y |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-39-3 | - | TO-18-3 |
Transistor Polarity | NPN | - | P-Channel |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 20 V | - | - |
Collector Base Voltage VCBO | 40 V | - | - |
Emitter Base Voltage VEBO | 3 V | - | - |
Collector Emitter Saturation Voltage | 0.5 V | - | - |
Maximum DC Collector Current | 0.4 A | - | - |
Gain Bandwidth Product fT | 1.2 GHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2N5109 | - | 2N51 |
Height | 6.6 mm | - | - |
Length | 9.4 mm | - | - |
Packaging | Bulk | - | Bulk |
Width | 9.4 mm | - | - |
Brand | Central Semiconductor | Microchip / Microsemi | InterFET |
Continuous Collector Current | 400 mA | - | - |
DC Collector/Base Gain hfe Min | 70 | - | - |
Pd Power Dissipation | 1 W | - | 500 mW (1/2 W) |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 500 | - | 1 |
Subcategory | Transistors | Transistors | - |
Part # Aliases | 2N5109 PBFREE | - | IFN5114 |
Technology | - | - | Si |
Vds Drain Source Breakdown Voltage | - | - | - 15 V |
Vgs Gate Source Breakdown Voltage | - | - | 30 V |
Drain Source Current at Vgs=0 | - | - | - 90 mA |
Id Continuous Drain Current | - | - | - 15 mA |
Rds On Drain Source Resistance | - | - | 75 Ohms |
Type | - | - | JFET |
Gate Source Cutoff Voltage | - | - | 10 V |