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SCTH90N65G2V-7

SCTH90N65G2V-7
Mfr. #:
SCTH90N65G2V-7
Manufacturer:
STMicroelectronics
Description:
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
Lifecycle:
New from this manufacturer.
Datasheet:
SCTH90N65G2V-7 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SCTH90N65G2V-7 more Information SCTH90N65G2V-7 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
SMD/SMT
Package / Case:
H2PAK-7
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
26 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.9 V
Vgs - Gate-Source Voltage:
10 V to 22 V
Qg - Gate Charge:
157 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
330 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
SCTH90N
Transistor Type:
1 N-Channel
Brand:
STMicroelectronics
Fall Time:
16 ns
Product Type:
MOSFET
Rise Time:
38 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
58 ns
Typical Turn-On Delay Time:
26 ns
Tags
SCTH, SCT
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
Part # Mfg. Description Stock Price
SCTH90N65G2V-7
DISTI # V36:1790_18695152		STMicroelectronicsSCTH90N65G2V-70
  • 1000000:$35.1100
  • 500000:$35.1200
  • 100000:$39.3700
  • 10000:$50.6500
  • 1000:$52.8000
SCTH90N65G2V-7
DISTI # 497-18352-1-ND		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SCTH90N65G2V-7
    DISTI # 497-18352-6-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SCTH90N65G2V-7
      DISTI # 497-18352-2-ND      		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
      RoHS: Compliant
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
        SCTH90N65G2V-7
        DISTI # SCTH90N65G2V-7        		STMicroelectronicsMOSFET 90A, 650V, 22mO (Alt: SCTH90N65G2V-7)
        RoHS: Compliant
        Min Qty: 1000        		Europe - 0
          SCTH90N65G2V-7
          DISTI # SCTH90N65G2V-7          		STMicroelectronicsMOSFET 90A, 650V, 22mO - Tape and Reel (Alt: SCTH90N65G2V-7)
          RoHS: Not Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
          • 10000:$37.5900
          • 6000:$38.3900
          • 4000:$40.1900
          • 2000:$42.0900
          • 1000:$44.1900
          SCTH90N65G2V-7
          DISTI # 02AH6929          		STMicroelectronicsPTD WBG & POWER RF0
          • 1:$36.8800
          SCTH90N65G2V-7
          DISTI # 511-SCTH90N65G2V-7          		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          RoHS: Compliant          		0
          • 1:$52.8000
          • 5:$51.6200
          • 10:$49.2600
          • 25:$47.2000
          • 100:$42.7700
          • 250:$41.2900
          • 500:$36.4900
          Image Part # Description
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7

          		 MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7-STMICROELECTRONICS

          		 SILICON CARBIDE POWER MOSFET 650
          Availability
          Stock:
          Available
          On Order:
          5500
          Enter Quantity:
          Current price of SCTH90N65G2V-7 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $52.80
          $52.80
          5
          $51.62
          $258.10
          10
          $49.26
          $492.60
          25
          $47.20
          $1 180.00
          100
          $42.77
          $4 277.00
          250
          $41.29
          $10 322.50
          500
          $36.49
          $18 245.00
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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