IPB011N04L G

IPB011N04L G
Mfr. #:
IPB011N04L G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB011N04L G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB011N04L G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-7
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
180 A
Rds On - Drain-Source Resistance:
800 uOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
346 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
250 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
180 S
Fall Time:
21 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
106 ns
Typical Turn-On Delay Time:
25 ns
Part # Aliases:
IPB011N04LGATMA1 IPB11N4LGXT SP000391498
Unit Weight:
0.056438 oz
Tags
IPB011N04LG, IPB011N04L, IPB011, IPB01, IPB0, IPB
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
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Availability
Stock:
606
On Order:
2589
Enter Quantity:
Current price of IPB011N04L G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.28
$4.28
10
$3.64
$36.40
100
$3.15
$315.00
250
$2.99
$747.50
500
$2.68
$1 340.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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