FDMC8854

Mfr. #:: FDMC8854
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 30V N-Ch Power Trench MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FDMC8854 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: FDMC8854 more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: Power-33-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 15 A

Rds On - Drain-Source Resistance:: 5.7 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 41 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.8 mm

Length:: 3.3 mm

Series:: FDMC8854

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 60 S

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 31 ns

Typical Turn-On Delay Time:: 13 ns

Unit Weight:: 0.005832 oz

Tags: FDMC88, FDMC8, FDMC, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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FDMC8854 Description

***emi: N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ

***ure Electronics: N-Channel 30 V 5.7 mOhm Surface Mount Power Trench Mosfet - Power 33

***el Electronic: RENESAS - ICL7660CBAZ-T - DC/DC-Ladungspumpen-Spannungsregler, einstellbar, 1.5V bis 10Vin, -10V bis -1.5V/45mAout, NSOIC-8

***rchild Semiconductor: This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4.4mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.9V

***nell: MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:15A; Resistance, Rds On:0.0057ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:Power 33; Termination Type:SMD; Current, Idm Pulse:30A; Power Dissipation:2W; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

***ure Electronics: Single N-Channel 30 V 8.5 mOhm 30 nC OptiMOS Power Mosfet - TDSON-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:71A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 71A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:45W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 5 mOhm 26 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC Tube

***icontronic: Small Signal Field-Effect Transistor, 17.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ark: MOSFET, N CH, 30V, 42A, POWER 56; Transistor Polarity:N Channel; Continuous Drai

*** Source Electronics: Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 30V 19A POWER56

***ure Electronics: N-Channel 30 V 4.9 mO Surface Mount PowerTrench Mosfet - Power 56

***el Electronic: VISHAY SEMICONDUCTOR TSAL7600 Infrared Emitter, 100 mA, 800 ns, 800 ns, 30 , 1.35 V, -40 C

*** Stop Electro: Power Field-Effect Transistor, 19A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMS0312S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ark: N CH POWER MOSFET, HEXFET, 30V, 17.2A, SOIC-8; Transistor Polarity:N Channel; Co

***ernational Rectifier: Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***(Formerly Allied Electronics): MOSFET, 30V, 16.6A, 6 MOHM, 24 NC QG, SO-8, HALOGEN-FREE | Infineon IRF8113GPBF

***ical: Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC

***eco: 30V,16A,5.5 OHMS, NCH,SINGLE, SO8,POWER TRENCH MOSFET

***Yang: TRANS MOSFET N-CH 30V 16A 8SOIC - Bulk

***inecomponents.com: 30V N-Channel PowerTrench MOSFET

***ark: MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:SOIC; Termination ;RoHS Compliant: Yes

FDMC8854 More Information

Fairchild PowerTrench MOSFETs

FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs: ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
FDMC8854 DISTI # 26636335	ON Semiconductor	30V,15A, 5.7 OHMS, NCH, POWER	3000	9000:$0.3750 3000:$0.3842
FDMC8854 DISTI # FDMC8854CT-ND	ON Semiconductor	MOSFET N-CH 30V 15A POWER33 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	432In Stock	1000:$0.5775 500:$0.7315 100:$0.9432 10:$1.1930 1:$1.3500
FDMC8854 DISTI # FDMC8854DKR-ND	ON Semiconductor	MOSFET N-CH 30V 15A POWER33 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	432In Stock	1000:$0.5775 500:$0.7315 100:$0.9432 10:$1.1930 1:$1.3500
FDMC8854 DISTI # FDMC8854TR-ND	ON Semiconductor	MOSFET N-CH 30V 15A POWER33 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5233
FDMC8854 DISTI # FDMC8854	ON Semiconductor	Trans MOSFET N-CH 30V 15A 8-Pin Power 33 T/R - Bulk (Alt: FDMC8854) RoHS: Compliant Min Qty: 511 Container: Bulk	Americas - 0	511:$0.3919 513:$0.3889 1024:$0.3839 2555:$0.3789 5110:$0.3699
FDMC8854 DISTI # FDMC8854	ON Semiconductor	Trans MOSFET N-CH 30V 15A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC8854) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5789 6000:$0.5749 12000:$0.5679 18000:$0.5609 30000:$0.5469
FDMC8854 DISTI # 67P3477	ON Semiconductor	N CHANNEL MOSFET, 30V, 15A POWER 33,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:1.9V RoHS Compliant: Yes	0	1000:$0.5360 500:$0.6720 250:$0.7150 100:$0.7570 50:$0.8680 25:$0.9780 1:$1.1500
FDMC8854 DISTI # 52M3180	ON Semiconductor	N CHANNEL MOSFET, 30V, 15A POWER 33,Continuous Drain Current Id:15A,Drain Source Voltage Vds:30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):4.4mohm,Operating Temperature Max:150°C RoHS Compliant: Yes	0	24000:$0.4480 9000:$0.4610 1:$0.4780
FDMC8854 DISTI # 512-FDMC8854	ON Semiconductor	MOSFET 30V N-Ch Power Trench MOSFET RoHS: Compliant	4114	1:$1.1200 10:$0.9520 100:$0.7310 500:$0.6460 1000:$0.5100 3000:$0.4520 9000:$0.4350
FDMC8854	ON Semiconductor	Power Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3590	1000:$0.6500 500:$0.6800 100:$0.7100 25:$0.7400 1:$0.7900
FDMC8854	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	101155	1000:$0.6500 500:$0.6800 100:$0.7100 25:$0.7400 1:$0.7900
FDMC8854	Fairchild Semiconductor Corporation		3173
FDMC8854 DISTI # 6710393P	ON Semiconductor	MOSFET N-CHANNEL 30V 15A POWER 33, RL	955	100:£0.8340 50:£0.8500
FDMC8854	Fairchild Semiconductor Corporation	15 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET	100	57:$0.6300 12:$0.9000 1:$1.8000
FDMC8854	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 3000

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FDMC8854

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes