IXTT12N150HV

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-268HV-2

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.5 kV

Id - Continuous Drain Current:

12 A

Rds On - Drain-Source Resistance:

2.2 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

106 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

890 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

IXYS

Fall Time:

14 ns

Product Type:

MOSFET

Rise Time:

16 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

53 ns

Typical Turn-On Delay Time:

26 ns

Tags

IXTT12N, IXTT12, IXTT1, IXTT, IXT