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IXFN82N60Q3

IXFN82N60Q3
Mfr. #:
IXFN82N60Q3
Manufacturer:
Littelfuse
Description:
MOSFET N-CH 600V 66A SOT-227
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN82N60Q3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXFN82N60Q3 more Information
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
Transistors - FETs, MOSFETs - Single
Series
IXFN82N60
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
SMD/SMT
Tradename
HyperFET
Package-Case
SOT-227-4
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
960 W
Rise-Time
300 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
66 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistance
75 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
275 nC
Tags
IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Part # Mfg. Description Stock Price
IXFN82N60Q3
DISTI # V36:1790_15877469		IXYS CorporationTrans MOSFET N-CH 600V 66A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN82N60Q3
    DISTI # IXFN82N60Q3-ND    		IXYS CorporationMOSFET N-CH 600V 66A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		24In Stock
    • 100:$34.9950
    • 30:$37.3280
    • 10:$40.3610
    • 1:$43.1600
    IXFN82N60Q3
    DISTI # 747-IXFN82N60Q3    		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
    RoHS: Compliant    		0
    • 1:$43.1600
    • 5:$41.6500
    • 10:$40.3700
    • 25:$37.3300
    • 50:$36.2300
    • 100:$35.0000
    • 200:$32.6700
    Image Part # Description
    IXFN80N50P

    Mfr.#: IXFN80N50P

    OMO.#: OMO-IXFN80N50P

    		 MOSFET 500V 80A
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3

    		 MOSFET Polar3 HiPerFET Power MOSFET
    IXFN80N50Q3

    Mfr.#: IXFN80N50Q3

    OMO.#: OMO-IXFN80N50Q3

    		 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
    IXFN82N60Q3

    Mfr.#: IXFN82N60Q3

    OMO.#: OMO-IXFN82N60Q3

    		 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
    IXFN80N10S1

    Mfr.#: IXFN80N10S1

    OMO.#: OMO-IXFN80N10S1-1190

    		 New and Original
    IXFN82N60Q3

    Mfr.#: IXFN82N60Q3

    OMO.#: OMO-IXFN82N60Q3-IXYS-CORPORATION

    		 MOSFET N-CH 600V 66A SOT-227
    IXFN80N48

    Mfr.#: IXFN80N48

    OMO.#: OMO-IXFN80N48-IXYS-CORPORATION

    		 MOSFET N-CH 480V 80A SOT-227B
    IXFN80N50Q3

    Mfr.#: IXFN80N50Q3

    OMO.#: OMO-IXFN80N50Q3-IXYS-CORPORATION

    		 MOSFET N-CH 500V 63A SOT-227
    IXFN80N50Q2

    Mfr.#: IXFN80N50Q2

    OMO.#: OMO-IXFN80N50Q2-IXYS-CORPORATION

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3-IXYS-CORPORATION

    		 MOSFET N-CH 600V 66A SOT-227B
    Availability
    Stock:
    Available
    On Order:
    1500
    Enter Quantity:
    Current price of IXFN82N60Q3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $49.00
    $49.00
    10
    $46.55
    $465.55
    100
    $44.10
    $4 410.45
    500
    $41.65
    $20 827.15
    1000
    $39.20
    $39 204.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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