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IXFH16N80P

IXFH16N80P
Mfr. #:
IXFH16N80P
Manufacturer:
Littelfuse
Description:
MOSFET 16 Amps 800V 0.6 Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXFH16N80P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH16N80P DatasheetIXFH16N80P Datasheet (P4-P5)
ECAD Model:
More Information:
IXFH16N80P more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
16 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs th - Gate-Source Threshold Voltage:
5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
71 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
460 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Height:
21.46 mm
Length:
16.26 mm
Series:
IXFH16N80
Transistor Type:
1 N-Channel
Type:
PolarHV Power MOSFET
Width:
5.3 mm
Brand:
IXYS
Forward Transconductance - Min:
9 S
Fall Time:
29 ns
Product Type:
MOSFET
Rise Time:
32 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
75 ns
Typical Turn-On Delay Time:
27 ns
Unit Weight:
0.229281 oz
Tags
IXFH16N, IXFH16, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
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MOSFET, N-CH, 800V, 16A, 150DEG C, 460W; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
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Single N-Channel 800 V 190 W 70 nC Silicon Through Hole Mosfet - TO-247-3
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Power Field-Effect Transistor, 17A I(D), 800V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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N CHANNEL POWER MOSFET, MDmesh, 800V, 17A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:190W; MSL:- RoHS Compliant: Yes
***icroelectronics
N-Channel 600 V, 0.48 Ohm, 13 A, TO-247 Zener-Protected SuperMesh(TM) POWER MOSFET
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MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
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Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXFH16N80P
DISTI # V99:2348_15877369		IXYS CorporationTrans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		3
  • 2500:$3.5450
  • 1000:$3.7850
  • 500:$4.0800
  • 250:$4.3010
  • 100:$4.9150
  • 50:$5.1240
  • 25:$5.2590
  • 10:$5.9090
  • 1:$6.4870
IXFH16N80P
DISTI # IXFH16N80P-ND		IXYS CorporationMOSFET N-CH 800V 16A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.6377
IXFH16N80P
DISTI # 30341253		IXYS CorporationTrans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		3
  • 2:$6.4870
IXFH16N80P
DISTI # 58M7593		IXYS CorporationMOSFET Transistor, N Channel, 16 A, 800 V, 600 mohm, 10 V, 5 V RoHS Compliant: Yes172
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
IXFH16N80P
DISTI # 747-IXFH16N80P		IXYS CorporationMOSFET 16 Amps 800V 0.6 Rds
RoHS: Compliant		560
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
  • 1000:$4.0300
IXFH16N80P
DISTI # 1427291		IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant		184
  • 1:$12.7300
  • 10:$11.3900
  • 25:$9.9000
  • 50:$9.7100
  • 100:$9.3300
  • 250:$7.9600
  • 500:$7.5500
  • 1000:$6.3800
IXFH16N80P
DISTI # C1S331700014337		IXYS CorporationTrans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		3
  • 1:$6.4870
IXFH16N80P
DISTI # 1427291		IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant		174
  • 1:£8.6800
  • 5:£7.9700
  • 10:£5.7300
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Availability
Stock:
485
On Order:
2468
Enter Quantity:
Current price of IXFH16N80P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.04
$8.04
10
$7.19
$71.90
25
$5.12
$128.00
50
$5.07
$253.50
100
$5.05
$505.00
250
$5.03
$1 257.50
500
$4.77
$2 385.00
1000
$4.03
$4 030.00
2500
$3.45
$8 625.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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