IRFR120NTRLPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

9.4 A

Rds On - Drain-Source Resistance:

210 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

25 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

48 W

Configuration:

Single

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

2.7 S

Fall Time:

23 ns

Product Type:

MOSFET

Rise Time:

23 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

32 ns

Typical Turn-On Delay Time:

4.5 ns

Part # Aliases:

SP001566916

Unit Weight:

0.139332 oz

Tags

IRFR120NTRL, IRFR120NTR, IRFR120NT, IRFR120N, IRFR120, IRFR12, IRFR1, IRFR, IRF