IGT60R070D1ATMA1 vs IGT60R190D1SATMA1 vs IGT60R190D1S

 
PartNumberIGT60R070D1ATMA1IGT60R190D1SATMA1IGT60R190D1S
DescriptionMOSFET 600V CoolGaN Power TransistorMOSFET 600V CoolGaN Power TransistorCoolgan 600V 12,5A 140mOhm HSOF
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologyGaNGaN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-HSOF-8PG-HSOF-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current31 A12.5 A-
Rds On Drain Source Resistance70 mOhms190 mOhms-
Vgs th Gate Source Threshold Voltage0.9 V0.9 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge5.8 nC3.2 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation125 W55.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolGaNCoolGaN-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time13 ns12 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns5 ns-
Factory Pack Quantity20002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns12 ns-
Typical Turn On Delay Time12 ns11 ns-
Part # AliasesSP001300364SP001701702-
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