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| PartNumber | SIHD14N60E-GE3 | SIHD12N50E-GE3 | SIHD12N50E |
| Description | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | - |
| Id Continuous Drain Current | 13 A | 10.5 A | - |
| Rds On Drain Source Resistance | 269 mOhms | 380 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 32 nC | 25 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 147 W | 114 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Bulk | - |
| Series | SIH | E | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 15 ns | 12 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 19 ns | 16 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | 29 ns | - |
| Typical Turn On Delay Time | 15 ns | 13 ns | - |
| Unit Weight | 0.011993 oz | 0.050717 oz | - |