We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| SIHD12N50E-GE3 DISTI # V36:1790_09218423 | Vishay Intertechnologies | N-CHANNEL 500V | 0 |
|
| SIHD12N50E-GE3 DISTI # SIHD12N50E-GE3-ND | Vishay Siliconix | MOSFET N-CHAN 500V DPAK Min Qty: 1 Container: Tube | 5455In Stock |
|
| SIHD12N50E-GE3 DISTI # SIHD12N50E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 10.5A 3-Pin DPAK (Alt: SIHD12N50E-GE3) Min Qty: 3000 | Europe - 0 | |
| SIHD12N50E-GE3 DISTI # SIHD12N50E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 10.5A 3-Pin DPAK - Tape and Reel (Alt: SIHD12N50E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIHD12N50E-GE3 DISTI # 43Y2396 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.33ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes RoHS: Compliant | 3868 |
|
| SIHD12N50E-GE3 DISTI # 78-SIHD12N50E-GE3 | Vishay Intertechnologies | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 3276 |
|
| SIHD12N50E-GE3 | Vishay Intertechnologies | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | Americas - | |
| SIHD12N50EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | Europe - 3000 | |
| SIHD12N50E | ISC | DPAK/TO-252 | 5000 | |
| SIHD12N50E-GE3 DISTI # 2471940RL | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant | 0 |
|
| SIHD12N50E-GE3 DISTI # 2471940 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant | 3868 |
|
| SIHD12N50E-GE3 DISTI # 2471940 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant | 3921 |
|
| SIHD12N50E-GE3 DISTI # 2471940RL | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant | 0 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: SIHD1K4N60E-GE3 OMO.#: OMO-SIHD1K4N60E-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
|
Mfr.#: SIHD14N60E-GE3 OMO.#: OMO-SIHD14N60E-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
|
|
Mfr.#: SIHD12N50E-GE3 OMO.#: OMO-SIHD12N50E-GE3 |
MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
|
|
Mfr.#: SIHD180N60E-GE3 OMO.#: OMO-SIHD180N60E-GE3 |
MOSFET 650V Vds; 30V Vgs DPAK (TO-252) |
|
|
Mfr.#: SIHD186N60EF-GE3 OMO.#: OMO-SIHD186N60EF-GE3 |
MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology |
|
Mfr.#: SIHD12N50E OMO.#: OMO-SIHD12N50E-1190 |
New and Original |
|
|
Mfr.#: SIHD12N50EGE3 OMO.#: OMO-SIHD12N50EGE3-1190 |
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
Mfr.#: SIHD14N60E-GE3 OMO.#: OMO-SIHD14N60E-GE3-VISHAY |
MOSFET N-CHANNEL 600V 13A DPAK |
|
Mfr.#: SIHD180N60E-GE3 OMO.#: OMO-SIHD180N60E-GE3-VISHAY |
E Series Power MOSFET DPAK (TO-252), 195 m @ 10V |
|
|
Mfr.#: SIHD1K4N60E-GE3 OMO.#: OMO-SIHD1K4N60E-GE3-VISHAY |
E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V |