 |  | | |
| PartNumber | SIHD12N50E-GE3 | SIHD12N50E | SIHD12N50EGE3 |
| Description | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 10.5 A | - | - |
| Rds On Drain Source Resistance | 380 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 114 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Bulk | - | - |
| Series | E | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 29 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHD12N50E-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | |
Vishay |
SIHD12N50E-GE3 | RF Bipolar Transistors MOSFET N-Channel 500V | |
| SIHD12N50E | New and Original | ||
| SIHD12N50EGE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |