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SIHD12N50E-GE3

SIHD12N50E-GE3
Mfr. #:
SIHD12N50E-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET N-Channel 500V
Lifecycle:
New from this manufacturer.
Datasheet:
SIHD12N50E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHD12N50E-GE3 more Information
Product Attribute
Attribute Value
Tags
SIHD12, SIHD1, SIHD, SIH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHD12N50E-GE3
DISTI # SIHD12N50E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 500V DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5455In Stock
  • 1000:$0.9251
  • 500:$1.1165
  • 100:$1.4355
  • 10:$1.7860
  • 1:$1.9800
SIHD12N50E-GE3
DISTI # SIHD12N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin DPAK - Tape and Reel (Alt: SIHD12N50E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.8439
  • 6000:$0.8189
  • 12000:$0.7849
  • 18000:$0.7639
  • 30000:$0.7429
SIHD12N50E-GE3
DISTI # 43Y2396		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.33ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes3879
  • 1:$1.8100
  • 10:$1.5000
  • 25:$1.3900
  • 50:$1.2700
  • 100:$1.1600
  • 250:$1.0900
  • 500:$1.0200
SIHD12N50E-GE3
DISTI # 78-SIHD12N50E-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3430
  • 1:$1.8100
  • 10:$1.5000
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.9680
  • 3000:$0.9670
SIHD12N50EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		Europe - 3000
    SIHD12N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		Americas -
      SIHD12N50E-GE3
      DISTI # 2471940      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3
      RoHS: Compliant      		3936
      • 5:£1.4000
      • 25:£1.1500
      • 100:£0.8870
      • 250:£0.8330
      • 500:£0.7790
      SIHD12N50E-GE3
      DISTI # 2471940      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3
      RoHS: Compliant      		3879
      • 1:$2.8700
      • 10:$2.3800
      • 100:$1.8400
      • 500:$1.6200
      • 1000:$1.5400
      SIHD12N50E-GE3
      DISTI # 2471940RL      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3
      RoHS: Compliant      		0
      • 1:$2.8700
      • 10:$2.3800
      • 100:$1.8400
      • 500:$1.6200
      • 1000:$1.5400
      Image Part # Description
      SIHD12N50E-GE3

      Mfr.#: SIHD12N50E-GE3

      OMO.#: OMO-SIHD12N50E-GE3

      		 MOSFET 500V Vds 30V Vgs DPAK (TO-252)
      SIHD12N50E-GE3

      Mfr.#: SIHD12N50E-GE3

      OMO.#: OMO-SIHD12N50E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET N-Channel 500V
      SIHD12N50E

      Mfr.#: SIHD12N50E

      OMO.#: OMO-SIHD12N50E-1190

      		 New and Original
      SIHD12N50EGE3

      Mfr.#: SIHD12N50EGE3

      OMO.#: OMO-SIHD12N50EGE3-1190

      		 Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      Availability
      Stock:
      Available
      On Order:
      2000
      Enter Quantity:
      Current price of SIHD12N50E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.11
      $1.11
      10
      $1.06
      $10.59
      100
      $1.00
      $100.29
      500
      $0.95
      $473.60
      1000
      $0.89
      $891.50
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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