SIHD12N50E-GE3

Mfr. #:: SIHD12N50E-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 500V Vds 30V Vgs DPAK (TO-252)
Lifecycle:: New from this manufacturer.
Datasheet:: SIHD12N50E-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SIHD12N50E-GE3 Datasheet SIHD12N50E-GE3 Datasheet (P4-P6)SIHD12N50E-GE3 Datasheet (P7-P9)
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More Information:: SIHD12N50E-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 500 V

Id - Continuous Drain Current:: 10.5 A

Rds On - Drain-Source Resistance:: 380 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 25 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 114 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Bulk

Series:: E

Brand:: Vishay / Siliconix

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 16 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 29 ns

Typical Turn-On Delay Time:: 13 ns

Unit Weight:: 0.050717 oz

Tags: SIHD12, SIHD1, SIHD, SIH

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SIHD12N50E-GE3 Description

***ure Electronics: Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-252-3

***ark: MOSFET, N-CH, 500V, 10.5A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

***SIT Distribution GmbH: Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 500V, 10.5A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

***icroelectronics: Automotive-grade N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a DPAK package

***ure Electronics: Single N-Channel 500 V 0.32 Ohm 27 nC 90 W Silicon SMT Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N CH, 500V, 12A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***icroelectronics: N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET

***et: Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 600 V 600 mOhm Surface Mount FDmesh II Power Mosfet - TO-252-3

***ark: MOSFET, N CH, 600V, 8A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.57ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ure Electronics: D Series 500 V 5.3 A 1.5 Ohm Single N-Channel Power MOSFET - TO-252

***ical: Trans MOSFET N-CH 500V 5.3A 3-Pin(2+Tab) DPAK

***el Electronic: MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS

*** International: MOSFET N-CH 500V 5.3A TO252 DPK

***S: French Electronic Distributor since 1988

***nell: MOSFET, N-CH, 500V, 5.3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***ical: Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK

***SIT Distribution GmbH: Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH, 500V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***ark: Mosfet Transistor, N Channel, 6 A, 500 V, 0.76 Ohm, 10 V, 5 V

***emi: N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, DPAK

***ment14 APAC: MOSFET, N-CH, 500V, 6A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:500V; On Resistance

***nsix Microsemi: Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ure Electronics: N-Channel 500 V 600 mOhm 32 nC CoolMOS Power Mosfet - PG-TO252-3-1

*** Source Electronics: Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.6A; Package / Case:TO-252; Power Dissipation Pd:83W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

SIHD12N50E-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHD12N50E-GE3 DISTI # SIHD12N50E-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 500V DPAK RoHS: Compliant Min Qty: 1 Container: Tube	5455In Stock	1000:$0.9251 500:$1.1165 100:$1.4355 10:$1.7860 1:$1.9800
SIHD12N50E-GE3 DISTI # SIHD12N50E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 500V 10.5A 3-Pin DPAK - Tape and Reel (Alt: SIHD12N50E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.8439 6000:$0.8189 12000:$0.7849 18000:$0.7639 30000:$0.7429
SIHD12N50E-GE3 DISTI # 43Y2396	Vishay Intertechnologies	MOSFET, N-CH, 500V, 10.5A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.33ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	3879	1:$1.8100 10:$1.5000 25:$1.3900 50:$1.2700 100:$1.1600 250:$1.0900 500:$1.0200
SIHD12N50E-GE3 DISTI # 78-SIHD12N50E-GE3	Vishay Intertechnologies	MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	3430	1:$1.8100 10:$1.5000 100:$1.1600 500:$1.0200 1000:$0.9680 3000:$0.9670
SIHD12N50EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	Europe - 3000
SIHD12N50E-GE3	Vishay Intertechnologies	MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	Americas -
SIHD12N50E-GE3 DISTI # 2471940	Vishay Intertechnologies	MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant	3936	5:£1.4000 25:£1.1500 100:£0.8870 250:£0.8330 500:£0.7790
SIHD12N50E-GE3 DISTI # 2471940	Vishay Intertechnologies	MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant	3879	1:$2.8700 10:$2.3800 100:$1.8400 500:$1.6200 1000:$1.5400
SIHD12N50E-GE3 DISTI # 2471940RL	Vishay Intertechnologies	MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant	0	1:$2.8700 10:$2.3800 100:$1.8400 500:$1.6200 1000:$1.5400

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SIHD12N50E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes