| Part Number | Manufacturer | Last Update Raw | RFQ |
|---|---|---|---|
| BSS123W-7 | Diodes inc. | 2024-05-03 | |
| BSS123W-7-F | Diodes inc. | 2024-05-03 | |
| BSS123W | On semiconductor | 2024-05-03 | |
| BSS123WQ-7-F | Diodes inc. | 2024-05-03 |
| Keywords | Volume | First Seen | Last Update Raw |
|---|---|---|---|
| bss123w-7-f | 0-10 | 2017-10-01T00:00:00Z | — |
| bss123w-7-f datasheet | 0-10 | — | |
| 512-bss123w | 0-10 | — | |
| bss123w-7 | 0-10 | — | |
| bss123w datasheet | 0-10 | — |
| Keywords | Volume | First Seen | Last Update Raw |
|---|---|---|---|
| bss123w 7 f | 30 | 2018-12-30T16:17:41Z | |
| bss123w | 10 | 2019-01-17T21:03:59Z |
| Keywords | Volume | First Seen | Last Update Raw |
|---|---|---|---|
| bss123w 7 f | 30 | 2018-12-30T16:17:41Z | |
| bss123w | 10 | 2019-01-17T21:03:59Z | |
| bss123w-7- | 0-10 | 2018-07-01T00:00:00Z | — |
| bss123w-7-f | 0-10 | 2017-10-01T00:00:00Z | — |
bss123w. N-CHANNEL ENHANCEMENT MODE MOSFET. Product Summary. V (BR)DSS. RDS(ON). ID. TA = +25°C. 100V. 6.0Ω @ VGS = 10V. 170mA.
This N-channel enhancement mode MOSFET is produced using high cell density , trench MOSFET technology. This product minimizes on-state resistance while ...
bss123w-7-F Diodes Incorporated MOSFET 100V 200mW datasheet, inventory, & pricing.
bss123w ON Semiconductor / Fairchild MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR datasheet, inventory, & pricing.
bss123w Rev. 1.0. December 2015. bss123w. N-Channel Logic Level Enhancement Mode Field Effect. Transistor. Features. • 0.17 A, 100 V, RDS(ON) = 6 Ω ...
bss123w. Electrical Characteristics @TA = 25°C unless otherwise specified. Characteristic. Symbol Min Typ Max. Unit. Test Condition.