CAT28C256
http://onsemi.com
3
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters Ratings Units
Temperature Under Bias –55 to +125 °C
Storage Temperature –65 to +150 °C
Voltage on Any Pin with Respect to Ground (Note 1) –2.0 V to +V
CC
+ 2.0 V V
V
CC
with Respect to Ground −2.0 to +7.0 V
Package Power Dissipation Capability (T
A
= 25°C) 1.0 W
Lead Soldering Temperature (10 secs) 300 °C
Output Short Circuit Current (Note 2) 100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+ 0.5 V, which may overshoot to V
CC
+ 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS (Note 3)
Symbol Parameter Test Method Min Max Units
N
END
Endurance MIL−STD−883, Test Method 1033 100,000 Cycles/Byte
T
DR
Data Retention MIL−STD−883, Test Method 1008 100 Years
V
ZAP
ESD Susceptibility MIL−STD−883, Test Method 3015 2,000 V
I
LTH
(Note 4) Latch−Up JEDEC Standard 17 100 mA
3. These parameters are tested initially and after a design or process change that affects the parameters.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
CC
+ 1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (V
CC
= 5 V ±10%, unless otherwise specified.)
Symbol Parameter Test Conditions
Limits
Units
Min Typ Max
I
CC
V
CC
Current (Operating, TTL) CE = OE = V
IL
,
f = 8 MHz, All I/O’s Open
30 mA
I
CCC
(Note 5) V
CC
Current (Operating, CMOS) CE = OE = V
ILC
,
f = 8 MHz, All I/O’s Open
25 mA
I
SB
V
CC
Current (Standby, TTL) CE = V
IH
, All I/O’s Open 1 mA
I
SBC
(Note 6) V
CC
Current (Standby, CMOS) CE = V
IHC
, All I/O’s Open 150
mA
I
LI
Input Leakage Current V
IN
= GND to V
CC
−10 10
mA
I
LO
Output Leakage Current V
OUT
= GND to V
CC
,
CE = V
IH
−10 10
mA
V
IH
(Note 6) High Level Input Voltage 2 V
CC
+ 0.3 V
V
IL
(Note 5) Low Level Input Voltage −0.3 0.8 V
V
OH
High Level Output Voltage
I
OH
= −400 mA
2.4 V
V
OL
Low Level Output Voltage I
OL
= 2.1 mA 0.4 V
V
WI
Write Inhibit Voltage 3.5 V
5. V
ILC
= −0.3 V to +0.3 V.
6. V
IHC
= V
CC
−0.3 V to V
CC
+ 0.3 V.