OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

CAT28C256H1315

P1-P3P4-P6P7-P9P10-P12P13-P14
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 6
1 Publication Order Number:
CAT28C256/D
CAT28C256
256 kb Parallel EEPROM
Description
The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel
EEPROM organized as 32K x 8−bits. It requires a simple interface for
in−system programming. On−chip address and data latches,
self−timed write cycle with auto−clear and V
CC
power up/down write
protection eliminate additional timing and protection hardware. DATA
Polling and Toggle status bits signal the start and end of the self−timed
write cycle. Additionally, the CAT28C256 features hardware and
software write protection.
The CAT28C256 is manufactured using ON Semiconductor’s
advanced CMOS floating gate technology. It is designed to endure
100,000 program/erase cycles and has a data retention of 100 years.
The device is available in JEDEC approved 28−pin DIP, 28−pin TSOP
or 32−pin PLCC packages.
Features
• Fast Read Access Times: 120/150 ns
• Low Power CMOS Dissipation:
– Active: 25 mA Max.
– Standby: 150 mA Max.
• Simple Write Operation:
– On−chip Address and Data Latches
– Self−timed Write Cycle with Auto−clear
• Fast Write Cycle Time:
− 5 ms Max.
• CMOS and TTL Compatible I/O
• Hardware and Software Write Protection
• Automatic Page Write Operation:
− 1 to 64 Bytes in 5 ms
− Page Load Timer
• End of Write Detection:
− Toggle Bit
− DATA Polling
• 100,000 Program/Erase Cycles
• 100 Year Data Retention
• Commercial, Industrial and Automotive Temperature Ranges
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
ORDERING INFORMATION
PLCC−32
N, G SUFFIX
CASE 776AK
Address InputsA
0
−A
14
Data Inputs/OutputsI/O
0
−I/O
7
Chip EnableCE
Output EnableOE
Write EnableWE
5 V SupplyV
CC
FunctionPin Name
PIN FUNCTION
GroundV
SS
No ConnectNC
PDIP−28
P, L SUFFIX
CASE 646AE
TSOP−28
T13, H13 SUFFIX
CASE 318AE
CAT28C256
http://onsemi.com
2
PIN CONFIGURATION
PLCC Package (N, G)DIP Package (P, L) TSOP Package (8 mm X 13.4 mm) (T13, H13)
5
4
7
6
3
2
1
10
9
12
11
8
24
25
22
23
26
27
28
19
20
17
18
21
V
CC
WE
A
11
A
10
CE
I/O
7
I/O
6
I/O
5
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
V
SS
5
7
6
10
9
12
11
8
13
14 1516 1718 19 20
4 3 2 1 32 31 30
29
27
28
24
25
22
23
26
21
A
8
A
9
A
11
NC
OE
A
10
CE
I/O
7
I/O
6
A
7
A
12
A
14
NC
V
CC
WE
A
13
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
V
SS
NC
OE
A
11
5
4
7
6
3
2
1
10
9
12
11
8
14
13
A
9
A
8
A
13
WE
24
25
22
23
26
27
28
19
20
17
18
21
15
16
A
4
A
3
A
6
A
5
A
7
A
12
A
14
V
CC
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
(Top Views)
14
13
15
16
I/O
4
I/O
3
A
13
A
8
A
9
OE
I/O
1
I/O
2
Figure 1. Block Diagram
ADDR. BUFFER
& LATCHES
ADDR. BUFFER
& LATCHES
INADVERTENT
CONTROL
LOGIC
TIMER
HIGH VOLTAGE
GENERATOR
I/O BUFFERS
32,768 x 8
EEPROM
ARRAY
CE
OE
WE
V
CC
A
0
−A
5
A
6
−A
14
WRITE
PROTECTION
COLUMN
DECODER
ROW
DECODER
DATA POLLING
AND
TOGGLE BIT
I/O
0
−I/O
7
64 BYTE PAGE
REGISTER
CAT28C256
http://onsemi.com
3
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters Ratings Units
Temperature Under Bias –55 to +125 °C
Storage Temperature –65 to +150 °C
Voltage on Any Pin with Respect to Ground (Note 1) –2.0 V to +V
CC
+ 2.0 V V
V
CC
with Respect to Ground −2.0 to +7.0 V
Package Power Dissipation Capability (T
A
= 25°C) 1.0 W
Lead Soldering Temperature (10 secs) 300 °C
Output Short Circuit Current (Note 2) 100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+ 0.5 V, which may overshoot to V
CC
+ 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS (Note 3)
Symbol Parameter Test Method Min Max Units
N
END
Endurance MIL−STD−883, Test Method 1033 100,000 Cycles/Byte
T
DR
Data Retention MIL−STD−883, Test Method 1008 100 Years
V
ZAP
ESD Susceptibility MIL−STD−883, Test Method 3015 2,000 V
I
LTH
(Note 4) Latch−Up JEDEC Standard 17 100 mA
3. These parameters are tested initially and after a design or process change that affects the parameters.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
CC
+ 1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (V
CC
= 5 V ±10%, unless otherwise specified.)
Symbol Parameter Test Conditions
Limits
Units
Min Typ Max
I
CC
V
CC
Current (Operating, TTL) CE = OE = V
IL
,
f = 8 MHz, All I/O’s Open
30 mA
I
CCC
(Note 5) V
CC
Current (Operating, CMOS) CE = OE = V
ILC
,
f = 8 MHz, All I/O’s Open
25 mA
I
SB
V
CC
Current (Standby, TTL) CE = V
IH
, All I/O’s Open 1 mA
I
SBC
(Note 6) V
CC
Current (Standby, CMOS) CE = V
IHC
, All I/O’s Open 150
mA
I
LI
Input Leakage Current V
IN
= GND to V
CC
−10 10
mA
I
LO
Output Leakage Current V
OUT
= GND to V
CC
,
CE = V
IH
−10 10
mA
V
IH
(Note 6) High Level Input Voltage 2 V
CC
+ 0.3 V
V
IL
(Note 5) Low Level Input Voltage −0.3 0.8 V
V
OH
High Level Output Voltage
I
OH
= −400 mA
2.4 V
V
OL
Low Level Output Voltage I
OL
= 2.1 mA 0.4 V
V
WI
Write Inhibit Voltage 3.5 V
5. V
ILC
= −0.3 V to +0.3 V.
6. V
IHC
= V
CC
−0.3 V to V
CC
+ 0.3 V.
P1-P3P4-P6P7-P9P10-P12P13-P14

CAT28C256H1315

Mfr. #:
Buy CAT28C256H1315
Manufacturer:
ON Semiconductor
Description:
EEPROM (32kx8) 256K 5V 150
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet