HMC667LP2E

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC667LP2 / 667LP2E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
v02.1110
General Description
Features
Functional Diagram
Typical Applications
The HMC667LP2(E) is ideal for:
• WiMAX, WiBro & Fixed Wireless
• SDARS & WLAN Receivers
• Infrastructure & Repeaters
• Access Points
• Telematics & DMB
Electrical Speci cations, T
A
= +25° C
Parameter
Vdd = +3 Vdc Vdd = +5 Vdc
Units
Min. Typ. Max. Min. Typ. Max.
Frequency Range 2300 - 2700 2300 - 2700 MHz
Gain 14 17.5 16 19 dB
Gain Variation Over Temperature 0.01 0.01 dB/ °C
Noise Figure 0.9 1.2 0.75 1.1 dB
Input Return Loss 10 12 dB
Output Return Loss 15 14 dB
Output Power for 1 dB
Compression (P1dB)
9.5 11.5 13.5 16.5 dBm
Saturated Output Power (Psat) 12.5 17 dBm
Output Third Order Intercept (IP3) 22 29.5 dBm
Supply Current (Idd) 24 32 59 75 mA
The HMC667LP2(E) is a GaAs PHEMT MMIC Low
Noise Ampli er that is ideal for WiMAX, WLAN and
xed wireless receivers operating between 2300
and 2700 MHz. This self-biased LNA has been
optimized to provide 0.75 dB noise  gure, 19 dB
gain and +29.5 dBm output IP3 from a single supply
of +5V. Input and output return losses are excellent
and the LNA requires minimal external matching and
bias decoupling components. The HMC667LP2(E)
can also operate from a +3V supply for lower power
applications.
Low Noise Figure: 0.75 dB
High Gain: 19 dB
High Output IP3: +29.5 dBm
Single Supply: +3V to +5V
6 Lead 2x2mm DFN Package: 4 mm
2
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC667* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC667LP2 Evaluation Board
DOCUMENTATION
Data Sheet
HMC667 Data Sheet
TOOLS AND SIMULATIONS
HMC667 S-Parameter
REFERENCE MATERIALS
Quality Documentation
HMC Legacy PCN: LP2E and LP2 QFN - Alternative
Assembly Source
Package/Assembly Qualification Test Report: 16L 3x3mm
QFN Package (QTR: 11003 REV: 02)
Package/Assembly Qualification Test Report: LP2, LP2C,
LP3, LP3B, LP3C, LP3D, LP3F, LP3G (QTR: 2014-0364)
Semiconductor Qualification Test Report: PHEMT-D (QTR:
2013-00254)
DESIGN RESOURCES
HMC667 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC667 EngineerZone Discussions.
SAMPLE AND BUY
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TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Input Return Loss vs. Temperature
[1]
Output Return Loss vs. Temperature
[1]
Broadband Gain & Return Loss
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
[1] Vdd = 5V
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
RESPONSE (dB)
S11
S21
S22
-20
-15
-10
-5
0
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
-20
-15
-10
-5
0
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
Gain vs. Temperature
12
14
16
18
20
22
24
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
Vdd=5V
Vdd=3V
P1dB vs. Temperature
6
8
10
12
14
16
18
20
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
P1dB (dBm)
Vdd=5V
Vdd=3V
Reverse Isolation vs. Temperature
[1]
-50
-45
-40
-35
-30
-25
-20
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
ISOLATION (dB)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC667LP2E

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier SMT lo Noise amp 2.3 to 2.7 GHz
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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