IRG7CH35UEF Datasheet IRG7CH35UEF | P1-P3

IRG7CH35UEF

1

V

CES

= 1200V

I

C(Nominal)

= 20A

T

J(max)

= 175°C

V

CE(on)

typ

= 1.9V @ I

C

= 20A

Applications

 Medium Power Drives

 UPS

 HEV Inverter

 Welding

 Induction Heating

E

C

G

n-channel

Base part number Package Type

Standard Pack

Orderable part number

Form Quantity

IRG7CH35UEF Die on film Wafer 1 IRG7CH35UEF

Mechanical Parameter 

Die Size 3.937 x 4.826 mm

2

Minimum Street Width

75 µm

Emiter Pad Size (Included Gate Pad) See Die Drawing

mm

2

Gate Pad Size 0.503 x 0.501

Area Total / Active 19/10

Thickness 120 µm

Wafer Size 200 mm

Flat Position 0 Degrees

Maximum-Possible Chips per Wafer 1447 pcs

Passivation Front side Silicon Nitride

Front Metal Al, Si (4µm)

Backside Metal AI- Ti - Ni- Ag (1kA°-1kA°-4kA°-6kA°)

Die Bond Electrically conductive epoxy or solder

Reject Ink Dot Size 0.25 mm diameter minimum

Features Benefits

Low V

CE(ON)

and switching Losses

High efficiency in a wide range of applications

and switching frequencies

Square RBSOA and Maximum Junction Temperature 175°C

Improved Reliability due to rugged hard switching

performance and higher power capability

Positive V

CE (ON)

Temperature Coefficient Excellent current sharing in parallel operation

G C E

Gate Collector Emitter



INSULATED GATE BIPOLAR TRANSISTOR



IRG7CH35UEF



2

Parameter Max. Units

V

CE

Collector-Emitter Voltage, T

J

=25°C 1200 V

I

C

DC Collector Current



A

I

LM

Clamped Inductive Load Current  80 A

V

GE

Gate Emitter Voltage ± 30 V

T

J

, T

STG

Operating Junction and Storage Temperature -40 to +175 °C

Maximum Ratings 

Static Characteristics (Tested on wafers) . T

J

=25°C 

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

Collector-to-Emitter Breakdown Voltage 1200 ––– –––

V

GE

= 0V, I

C

= 100µA 

V

CE(sat)

Collector-to-Emitter Saturated Voltage ––– 1.35 1.60 V

GE

= 15V, I

C

= 5A, T

J

= 25°C

V

GE(th)

Gate-Emitter Threshold Voltage 3.0 ––– 6.0

I

C

= 600A , V

GE

= V

CE

I

CES

Zero Gate Voltage Collector Current ––– 2.0 100

µA

V

CE

= 1200V, V

GE

= 0V

I

GES

Gate Emitter Leakage Current ––– ––– ± 100 nA V

CE

= 0V, V

GE

= ±30V

Electrical Characteristics (Not subject to production test- Verified by design/characterization)

Parameter Min. Typ. Max. Units Conditions

V

CE(sat)

Collector-to-Emitter Saturated Voltage

––– 1.9 2.2

V

GE

= 15V, I

C

= 20A , T

J

= 25°C 

–––

2.4

––– V

GE

= 15V, I

C

= 20A , T

J

= 175°C

RBSOA  Reverse Bias Safe Operating Area  FULL SQUARE 

T

J

= 175°C, I

C

= 80A

V

CC

= 960V, Vp 1200V

Rg = 10, V

GE

= +20V to 0V

C

iss

Input Capacitance ––– 1905 –––

pF

V

GE

= 0V

C

oss

Output Capacitance ––– 60 ––– V

CE

= 30V

C

rss

Reverse Transfer Capacitance ––– 40 –––

ƒ = 1.0MHz,

Q

g

Total Gate Charge (turn-on) — 85 —

nC

I

C

= 20A 

Q

ge

Gate-to-Emitter Charge (turn-on) — 15 —

V

GE

= 15V

Q

gc

Gate-to-Collector Charge (turn-on) — 35 —

V

CC

= 600V

Switching Characteristics (Inductive Load-Not subject to production test-Verified by design/characterization)

Parameter Min. Typ. Max. Units Conditions 

t

d(on)

Turn-On delay time — 30 —

ns

I

C

= 20A, V

CC

= 600V

t

r

Rise time — 15 —

R

G

= 10, V

GE

=15V, L=200µH

t

d(off)

Turn-Off delay time — 160 —

T

J

= 25°C

t

f

Fall time — 80 —

t

d(on)

Turn-On delay time — 25 —

I

C

= 20A, V

CC

= 600V

t

r

Rise time — 20 —

R

G

= 10, V

GE

=15V, L= 200µH

t

d(off)

Turn-Off delay time — 200 —

T

J

= 175°C

t

f

Fall time — 200 —



IRG7CH35UEF



3

Die Drawing

Notes:

The current in the application is limited by T

JMax

and the thermal properties of the assembly.

V

CC

= 80% (V

CES

), V

GE

= 20V, L = 200µH, R

G

= 10.

Refer to AN-1086 for guidelines for measuring V

(BR)CES

safely

Die Level Characterization

Values influenced by parasitic L and C in measurement

3.937

[.155]

4.826

[.190]

2.423

[.095]

3.120

[.123]

0.501

[.0197]

0.503

[.0198]

5. DIE THICKNESS = 0.120 [.0047]

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. DIMENSIONAL TOLERANCES:

3. LETTER DESIGNATION:

2. CONTROLLING DIMENSION: MILLIMETERS

NOTES:

WIDTH < [.050] TOLERANCE = + /- [ .004]

> [.050] TOLERANCE = + /- [.008]

> 1.270 TOLERANCE = + /- 0.203&

LENGTH

> [.0250] TOLERANCE = + /- [.0010]

> 0.635 TOLERANCE = + /- 0.025

< [.0250] TOLERANCE = + /- [.0005]

< 0.635 TOLERANCE = + /- 0.013

< 1.270 TOLERANCE = + /- 0.102

&

LENGTH

OVERALL DIE:

WIDTH

BONDING PADS:

SK = SOURCE KELVIN

IS = CURRENTSENSEG = GATE

S = SOURCE E = EMITTER

REFERENCE: IRG7CH35UB

IRG7PH35UPBF

IRG7PH35U-EP

IRG7PH35UDPBF

IRG7PH35UD1-EP

IRG7PH35UD-EP

IRG7PH35UD1PBF

IRG7CH35UEF

IRG7CH35UEF

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