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STW80NE06-10

P1-P3P4-P6P7-P8
1/8October 2000
STW80NE06-10
N-CHANNEL 60V - 0.0085Ω - 80A TO-247
STripFET™ POWER MOSFET
(1) I
SD
≤
80A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Current limited by package
■ TYPICAL R
DS
(on) = 0.0085Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
■ DC-DC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
(●) Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STW80NE06-10 60 V < 0.01
Ω
80 A(*)
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
Ω
)
60 V
V
GS
Gate- source Voltage ±20 V
I
D
Drain Current (continuos) at T
C
= 25°C
80 A
I
D
Drain Current (continuos) at T
C
= 100°C
57 A
I
DM
(●)
Drain Current (pulsed) 320 A
P
TOT
Total Dissipation at T
C
= 25°C
250 W
Derating Factor 1.66 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
T
stg
Storage Temperature –65 to 175 °C
T
j
Max. Operating Junction Temperature 175 °C
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
STW80NE06-10
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
R
thj-case
Thermal Resistance Junction-case Max 0.6 °C/W
R
thj-amb
Thermal Resistance Junction-ambient Max 30 °C/W
R
thj-sink
Thermal Resistance Case-sink Typ 0.1 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
80 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
350 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0 60 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, T
C
= 125 °C
10 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±20V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
234V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 40 A
0.0085 0.01
Ω
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max,
V
GS
=10V
80 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
> I
D(on)
x R
DS(on)max,
I
D
=40 A
19 38 S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
7600 pF
C
oss
Output Capacitance 890 pF
C
rss
Reverse Transfer
Capacitance
150 pF
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
3/8
STW80NE06-10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30V, I
D
= 40A
R
G
= 4.7
Ω
V
GS
= 10V
(see test circuit, Figure 3)
50 ns
t
r
Rise Time 150 ns
Q
g
Total Gate Charge
V
DD
= 48V, I
D
= 40A,
V
GS
= 10V
140 189 nC
Q
gs
Gate-Source Charge 20 nC
Q
gd
Gate-Drain Charge 50 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Off-voltage Rise Time V
DD
= 48 V, I
D
=40 A
R
G
=4.7
Ω,
V
GS
= 10V
45
ns
t
f
Fall Time (see test circuit, Figure 5) 75 ns
t
c
Cross-over Time 130 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 80 A
I
SDM
(1)
Source-drain Current (pulsed) 320 A
V
SD
(2)
Forward On Voltage
I
SD
= 80A, V
GS
= 0
1.5 V
t
rr
Reverse Recovery Time I
SD
= 80A, di/dt = 100A/µs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
100 ns
Q
rr
Reverse Recovery Charge 0.4 nC
I
RRM
Reverse Recovery Current 8 A
Safe Operating Area Thermal Impedence
P1-P3P4-P6P7-P8

STW80NE06-10

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Buy STW80NE06-10
Manufacturer:
STMicroelectronics
Description:
MOSFET
Lifecycle:
New from this manufacturer.
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