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STW80NE06-10

P1-P3P4-P6P7-P8
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
STW80NE06-10
4/8
Output Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
Transfer Characteristics
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
5/8
STW80NE06-10
Source-drain Diode Forward Characteristics
Normalized Drain-Source Breakdown vs
Temperature
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
STW80NE06-10
6/8
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
P1-P3P4-P6P7-P8

STW80NE06-10

Mfr. #:
Buy STW80NE06-10
Manufacturer:
STMicroelectronics
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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