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74ALVC32D,112

P1-P3P4-P6P7-P9P10-P12P13-P15
74ALVC32 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 20 January 2014 3 of 14
NXP Semiconductors
74ALVC32
Quad 2-input OR gate
5.2 Pin description
6. Functional description
[1] H = HIGH voltage level
L = LOW voltage level
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When V
CC
= 0 V (power-down mode), the output voltage can be 3.6 V in normal operation.
[3] For SO14 packages: above 70 C derate linearly with 8 mW/K.
For TSSOP14 packages: above 60 C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C derate linearly with 4.5 mW/K.
Table 2. Pin description
Symbol Pin Description
nA 1, 4, 9, 12 data input
nB 2, 5, 10, 13 data input
nY 3, 6, 8, 11 data output
V
CC
14 supply voltage
GND 7 ground (0 V)
Table 3. Function table
[1]
Input nA Input nB Output nY
LLL
LHH
HLH
HHH
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +4.6 V
I
IK
input clamping current V
I
<0V 50 - mA
V
I
input voltage 0.5 +4.6 V
I
OK
output clamping current V
O
>V
CC
or V
O
<0V - 50 mA
V
O
output voltage output HIGH or LOW state
[1]
[2]
0.5 V
CC
+0.5 V
output 3-state 0.5 +4.6 V
power-down mode, V
CC
= 0 V
[2]
0.5 +4.6 V
I
O
output current V
O
=0V toV
CC
- 50 mA
I
CC
supply current - 100 mA
I
GND
ground current 100 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 C to +85 C
[3]
-500 mW
74ALVC32 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 20 January 2014 4 of 14
NXP Semiconductors
74ALVC32
Quad 2-input OR gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 1.65 3.6 V
V
I
input voltage 0 3.6 V
V
O
output voltage output HIGH or LOW state 0 V
CC
V
output 3-state 0 3.6 V
power-down mode; V
CC
=0V 0 3.6 V
T
amb
ambient temperature in free air 40 +85 C
t/V input transition rise and fall rate V
CC
=1.65V to2.7V 0 20 ns/V
V
CC
= 2.7 V to 3.6 V 0 10 ns/V
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 40 C to +85 C Unit
Min Typ
[1]
Max
V
IH
HIGH-level input voltage V
CC
= 1.65 V to 1.95 V 0.65 V
CC
-- V
V
CC
= 2.3 V to 2.7 V 1.7 - - V
V
CC
= 2.7 V to 3.6 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 1.65 V to 1.95 V - - 0.35 V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 V
V
OH
HIGH-level output voltage V
I
=V
IH
or V
IL
I
O
= 100 A; V
CC
=1.65Vto3.6V V
CC
0.2 - - V
I
O
= 6mA; V
CC
= 1.65 V 1.25 1.51 - V
I
O
= 12 mA; V
CC
= 2.3 V 1.8 2.10 - V
I
O
= 18 mA; V
CC
= 2.3 V 1.7 2.01 - V
I
O
= 12 mA; V
CC
= 2.7 V 2.2 2.53 - V
I
O
= 18 mA; V
CC
= 3.0 V 2.4 2.76 - V
I
O
= 24 mA; V
CC
= 3.0 V 2.2 2.68 - V
V
OL
LOW-level output voltage V
I
=V
IH
or V
IL
I
O
= 100 A; V
CC
= 1.65 V to 3.6 V - - 0.2 V
I
O
=6mA; V
CC
= 1.65 V - 0.11 0.3 V
I
O
=12mA; V
CC
= 2.3 V - 0.17 0.4 V
I
O
=18mA; V
CC
= 2.3 V - 0.25 0.6 V
I
O
=12mA; V
CC
= 2.7 V - 0.16 0.4 V
I
O
=18mA; V
CC
= 3.0 V - 0.23 0.4 V
I
O
=24mA; V
CC
= 3.0 V - 0.30 0.55 V
I
I
input leakage current V
CC
= 3.6 V; V
I
=3.6VorGND - 0.1 5 A
I
OFF
power-off leakage current V
CC
= 0 V; V
I
or V
O
= 0V to 3.6V - 0.1 10 A
74ALVC32 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 20 January 2014 5 of 14
NXP Semiconductors
74ALVC32
Quad 2-input OR gate
[1] All typical values are measured at V
CC
= 3.3 V (unless stated otherwise) and T
amb
=25C.
10. Dynamic characteristics
[1] Typical values are measured at T
amb
=25C
[2] t
pd
is the same as t
PHL
and t
PLH
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
N = number of inputs switching
(C
L
V
CC
2
f
o
) = sum of the outputs
I
CC
supply current V
CC
= 3.6 V; V
I
=V
CC
or GND;
I
O
=0A
-0.210A
I
CC
additional supply current per input pin; V
CC
= 3.0 V to 3.6 V;
V
I
=V
CC
0.6 V; I
O
=0A
-5750A
C
I
input capacitance - 3.5 - pF
Table 6. Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 40 C to +85 C Unit
Min Typ
[1]
Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7.
Symbol Parameter Conditions T
amb
= 40 C to +85 C Unit
Min Typ
[1]
Max
t
pd
propagation delay CP to Qn; see Figure 6
[2]
V
CC
= 1.65 V to 1.95 V 1.0 2.8 4.7 ns
V
CC
= 2.3 V to 2.7 V 1.0 2.0 3.1 ns
V
CC
= 2.7 V 1.0 2.2 2.9 ns
V
CC
= 3.0 V to 3.6 V 1.0 2.0 2.8 ns
C
PD
power dissipation
capacitance
per gate; V
I
= GND to V
CC
; V
CC
= 3.3 V
[3]
-25-pF
P1-P3P4-P6P7-P9P10-P12P13-P15

74ALVC32D,112

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Buy 74ALVC32D,112
Manufacturer:
Nexperia
Description:
Logic Gates 3.3V QUAD 2-INPUT OR
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New from this manufacturer.
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