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BUK9575-100A,127

P1-P3P4-P6P7-P9P10-P12P13-P13
BUK9575-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 26 April 2011 3 of 12
NXP Semiconductors
BUK9575-100A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage R
GS
=20kΩ - 100 V
V
GS
gate-source voltage -15 15 V
I
D
drain current T
mb
=100°C - 16 A
T
mb
=25°C - 23 A
I
DM
peak drain current T
mb
= 25 °C; pulsed - 91 A
P
tot
total power dissipation T
mb
=25°C - 98 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 23 A
I
SM
peak source current pulsed; T
mb
=25°C - 92 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=14.2A; V
sup
≤ 25 V; R
GS
=50Ω;
V
GS
=5V; T
j(init)
= 25 °C; unclamped
- 100 mJ
V
GS
≥ 5 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
40
60
20
80
100
P
der
(%)
0
T
mb
(°C)
0 20015050 100
003aaf170
40
60
20
80
100
I
D
(%)
0
T
mb
(°C)
0 20015050 100
003aaf171
BUK9575-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 26 April 2011 4 of 12
NXP Semiconductors
BUK9575-100A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
T
mb
= 25 °C; I
DM
is single pulse unclamped inductive load
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4. Single-shot avalanche rating; avalanche
current as a function of avalanche period
V
DS
(V)
110
3
10
2
10
003aaf172
10
2
10
10
3
I
DM
(A)
1
D.C.
10 ms
1 ms
100 μs
10 μs
tp = 1 μs
R
DS(on)
= V
DS
/ I
D
003aaf188
t
AV
(ms)
10
−3
10110
−2
10
−1
10
10
2
I
AV
1
25 °C
T
j
prior to avalanche = 150 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from
junction to mounting base
--1.5K/W
R
th(j-a)
thermal resistance from
junction to ambient
in free air - 60 - K/W
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aaf173
1
10
−1
10
Z
th(j-mb)
(K/W)
10
−2
t
p
(s)
10
−6
110
−1
10
−2
10
−5
10
−3
10
−4
t
p
t
p
T
P
t
T
δ =
0
δ = 0.5
0.2
0.1
0.05
0.02
BUK9575-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 26 April 2011 5 of 12
NXP Semiconductors
BUK9575-100A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
= 25 °C 100 - - V
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 89 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C 0.5 - - V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C 1 1.5 2 V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C --2.3V
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=100V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
GS
=10V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-10V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=10A; T
j
= 25 °C - 55 72 mΩ
V
GS
=5V; I
D
=10A; T
j
= 175 °C - - 188 mΩ
V
GS
=4.5V; I
D
=10A; T
j
= 25 °C - 61 84 mΩ
V
GS
=5V; I
D
=10A; T
j
= 25 °C - 60 75 mΩ
Dynamic characteristics
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C
- 1278 1704 pF
C
oss
output capacitance - 129 155 pF
C
rss
reverse transfer
capacitance
- 88 120 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=5V;
R
G(ext)
=10Ω; T
j
=25°C
- 1320ns
t
r
rise time - 120 168 ns
t
d(off)
turn-off delay time - 58 87 ns
t
f
fall time - 5786ns
L
D
internal drain
inductance
from drain lead 6 mm from package to
centre of die; T
j
=25°C
-4.5-nH
from contact screw on tab to centre of
die; T
j
=25°C
-3.5-nH
L
S
internal source
inductance
from source lead to source bond pad;
T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=10A; V
GS
=0V; T
j
= 25 °C - 0.85 1.2 V
I
S
=23A; V
GS
=0V; T
j
=25°C - 1.1 - V
t
rr
reverse recovery time I
S
=23A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-63-ns
Q
r
recovered charge - 0.22 - µC
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK9575-100A,127

Mfr. #:
Buy BUK9575-100A,127
Manufacturer:
Nexperia
Description:
MOSFET N-CH 100V 23A TO220AB
Lifecycle:
New from this manufacturer.
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