BUK9575-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 26 April 2011 6 of 12
NXP Semiconductors
BUK9575-100A
N-channel TrenchMOS logic level FET
T
j
= 25 °C T
j
= 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
T
j
= 25 °C; I
D
= 25 A V
DS
> I
D
x R
DSon
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
V
DS
> I
D
x R
DSon
Fig 10. Forward transconductance as a function of
drain current; typical values
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
20
40
60
I
D
(A)
0
V
DS
(V)
0108462
003aaf174
2.2
2.4
2.6
2.8
3
3.2
3.6
3.4
V
GS
(V) = 10
3.845
003aaf175
I
D
(A)
10 403020
80
100
60
120
140
R
DS(on)
(mΩ)
40
4
4.2
4.4
4.6
4.8
5
003aaf176
V
GS
(V)
357910864
60
65
55
70
75
R
DS(on)
(mΩ)
50
10
15
5
20
25
I
D
(A)
0
V
GS
(V)
04312
003aaf178
T
j
= 25 °C T
j
= 175 °C
003aaf179
V
GS
(V)
0604020
0
30
20
10
40
g
fs
(S)
003aaf180
T
mb
(°C)
−100 2001000
1.5
2.0
1.0
2.5
3.0
a
0.5
