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VN02H-12-E

P1-P3P4-P6P7-P9P10-P10
VN02H
HIGH SIDE SMART POWER SOLID STATE RELAY
®
March 1999
BLOCK DIAGRAM
TYPE V
DSS
R
DS(on
)I
OUT
V
CC
VN02H 60 V 0.4 Ω 6 A 36 V
■ OUTPUT CURRENT (CONTINUOUS):
6A @ T
c
=25
o
C
■ 5V LOGIC LEVEL COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAGE SHUT-DOWN
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN02H is a monolithic devices made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
ORDER CODES:
PENTAWATT
vertical VN02H
PENTAWATT horizontal VN02H(011Y)
PENTAWATT in-line VN02H(012Y)
PENTAWATT
(in-line)
1/10
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Breakdown Voltage 60 V
I
OUT
Output Current (cont.) 6 A
I
R
Reverse Output Current -6 A
I
IN
Input Current ±10 mA
V
CC
Supply Voltage (for t = 400 ms) 60 V
-V
CC
Reverse Supply Voltage -4 V
I
STAT
Status Current ±10 mA
V
ESD
Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
P
tot
Power Dissipation at T
c
≤ 25
o
C 28 W
T
j
Junction Operating Temperature -40 to 150
o
C
T
stg
Storage Temperature -55 to 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VN02H
2/10
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.4
60
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (V
CC
= 9 to 36 V; -40 ≤ T
j
≤ 125
o
C unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
Supply Voltage see note 1 5 36 V
R
on
On State Resistance I
OUT
= 3 A
I
OUT
= 3 A T
j
= 25
o
C
0.8
0.4
Ω
Ω
I
S
Supply Current Off State T
j
≥ 25
o
C
On State
50
20
µA
mA
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time Of
Output Current
I
OUT
= 3 A Resistive Load
Input Rise Time < 0.1 µs T
j
= 25
o
C
51020µs
t
r
Rise Time Of Output
Current
I
OUT
= 3 A Resistive Load
Input Rise Time < 0.1 µs T
j
= 25
o
C
51545µs
t
d(off)
Turn-off Delay Time Of
Output Current
I
OUT
= 3 A Resistive Load
Input Rise Time < 0.1 µs T
j
= 25
o
C
51530µs
t
f
Fall Time Of Output
Current
I
OUT
= 3 A Resistive Load
Input Rise Time < 0.1 µs T
j
= 25
o
C
2615µs
(di/dt)
on
Turn-on Current Slope I
OUT
= 3 A
I
OUT
= I
OV
25 ≤ T
j
≤ 140
o
C
0.05 0.15 0.5
2
A/µs
A/µs
(di/dt)
off
Turn-off Current Slope I
OUT
= 3 A
I
OUT
= I
OV
25 ≤ T
j
≤ 140
o
C
0.1 0.4 2
4
A/µs
A/µs
V
demag
Inductive Load Clamp
Voltage
I
OUT
= 3 A L = 1 mH -7 -4 -2 V
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IL
Input Low Level
Voltage
0.8 V
V
IH
Input High Level
Voltage
2(*)V
V
I(hyst.)
Input Hysteresis
Voltage
0.5 V
I
IN
Input Current V
IN
= 5 V 250 500 µA
V
ICL
Input Clamp Voltage I
IN
= 10 mA
I
IN
= -10 mA
5.5 6
-0.7 -0.3
V
V
VN02H
3/10
P1-P3P4-P6P7-P9P10-P10

VN02H-12-E

Mfr. #:
Buy VN02H-12-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Hi SIDE SMART Pwr SOLID STATE RELAY
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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