IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1X100N60B3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 22 40 S
C
ies
4860 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 475 pF
C
res
83 pF
Q
g(on)
143 nC
Q
ge
I
C
= 70A, V
GE
= 15V, V
CE
= 0.5 • V
CES
37 nC
Q
gc
60 nC
t
d(on)
30 ns
t
ri
70 ns
E
on
1.9 mJ
t
d(off)
120 ns
t
fi
150 ns
E
off
2.0 2.8 mJ
t
d(on)
32 ns
t
ri
60 ns
E
on
2.3 mJ
t
d(off)
150 ns
t
fi
200 ns
E
off
2.8 mJ
R
thJC
0.31 °C/W
R
thCS
0.05 °C/W
Inductive load, T
J
= 150°C
I
C
= 70A, V
GE
= 15V
V
CE
= 360V, R
G
= 2Ω
Note 2
I
F
= 60A, V
GE
= 0V, T
J
= 100°C
-di
F
/dt = 200A/μs, V
R
= 300V
Inductive load, T
J
= 25°C
I
C
= 70A, V
GE
= 15V
V
CE
= 360V, R
G
= 2Ω
Note 2
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 60A, V
GE
= 0V, Note 1 1.6 2.5 V
T
J
= 150°C 1.4 1.8 V
I
RM
8.3 A
t
rr
140 ns
R
thJC
0.62 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
