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MMIX1X100N60B3H1

P1-P3P4-P6P7-P8
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1X100N60B3H1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
10V
9V
11V
7V
6V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18 20
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
10V
11V
13V
12V
8V
7V
9V
14V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
10V
8V
9V
7V
5V
11V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 70A
I
C
= 35A
I
C
= 140A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 140
A
T
J
= 25ºC
70
A
35
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
4567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= 150ºC
25ºC
- 40ºC
© 2013 IXYS CORPORATION, All Rights Reserved
MMIX1X100N60B3H1
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
200
220
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 2
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 70A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limit
DC
100µs
100ms
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1X100N60B3H1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
E
off
- MilliJoules
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
100
140
180
220
260
300
340
23456789101112131415
R
G
- Ohms
t
f i
- Nanoseconds
100
140
180
220
260
300
340
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC,
V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
50
100
150
200
250
300
350
400
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
40
80
120
160
200
240
280
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
100
120
140
160
180
200
220
240
260
280
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
60
80
100
120
140
160
180
200
220
240
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
P1-P3P4-P6P7-P8

MMIX1X100N60B3H1

Mfr. #:
Buy MMIX1X100N60B3H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT SMPD PKG-STANDARD
Lifecycle:
New from this manufacturer.
Delivery:
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