DG2034E
www.vishay.com
Vishay Siliconix
S17-0388-Rev. A, 20-Mar-17
1
Document Number: 73172
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power Down Fault Protected,
1.8 V to 5.5 V, 2.5 , 4-Channel (4:1) Multiplexer
DESCRIPTION
The DG2034E is a four-channel multiplexer that operates
with a single 1.8 V to 5.5 V power supply. It features power
down fault protection that prevents excessive current flow
when V+ is to ground.
The device’s low power dissipation and wide voltage range
make it ideal for use in battery powered products. The ultra
low capacitance and charge injection of the switch make it
an ideal solution for data acquisition and sample and hold
applications, where low glitch and fast settling are required.
Low switch resistance and fast switching speeds, together
with high signal bandwidth, make the DG2034E suitable for
video signal switching.
The DG2034E switches one of four inputs to a common
output as determined by the 3-bit binary address lines: A0,
A1, and EN. Each switch conducts equally well in both
directions when on, blocks input voltages up to the supply
level when off, and exhibits break before make switching
action.
The device’s high ESD and latch-up current capability make
it more reliable in designs where the part sits close to the
interface.
The DG2034E is available in MSOP10 and QFN12
3 mm x 3 mm packages.
FEATURES
•2.5 switch on-resistance
7 pF source-off capacitance
27 pF comm-off capacitance
33 pF comm-on capacitance
13 ns turn-on time
-2 pC charge injection
-67 dB off-isolation at 1 MHz
-71 dB crosstalk at 1 MHz
166 MHz bandwidth
•8 kV ESD / HBM
400 mA latch-up current
BENEFITS
Power down fault protection
Low parasitic and charge injection
Wide operation voltage range
High ESD tolerance
APPLICATIONS
Automatic test equipment
Process control and automation
Data acquisition systems
Meters and instruments
Medical and healthcare systems
Communication systems
Audio and video switching
Relay replacements
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic
GND COM
S3 S4
S1 S2
1
2
3
9
8
7
456
12 11 10
EN NC V+
Top V i ew
12-Pin QFN (3 mm x 3 mm)
A0 NC A1
A1
S2
COM
1
2
3
10
9
Top View
A0
S1
GND
8
MSOP-10
S4
V+
4
5
7
S3
EN
6
Logic
DG2034E
www.vishay.com
Vishay Siliconix
S17-0388-Rev. A, 20-Mar-17
2
Document Number: 73172
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Signals on S
X
, COM, EN or A
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 16.2 mV/°C above 70 °C
d. Derate 4 mV/°C above 70 °C
TRUTH TABLE
A1 A0 EN ON SWITCH
XX0None
001S1
011S2
101S3
111S4
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C
MSOP-10 DG2034EDQ-T1-GE3
12-pin QFN
(3 mm x 3 mm)
DG2034EDN-T1-GE4
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Referenced V+ to GND -0.3 to +6
V
A
X
, EN, S
X
, COM
a
-0.3 to (V+ + 0.3)
Continuous current (any terminal) ± 50
mA
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 100
Power dissipation (package)
b
QFN-12 (3 mm x 3 mm)
c
1295
mW
MSOP-10
d
320
Storage temperature (D suffix) -65 to +150 °C
ESD / HBM EIA / JESD22-A114-A 8k
V
ESD / CDM EIA / JESD22-C101-A 2k
Latch up JESD78 400 mA
DG2034E
www.vishay.com
Vishay Siliconix
S17-0388-Rev. A, 20-Mar-17
3
Document Number: 73172
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. V
A
, EN = input voltage to perform proper function
f. Difference of min. and max. values
g. Guaranteed by 5 V testing
SPECIFICATIONS (V+ = 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 3 V, ± 10 %, V
AL
= 0.5 V, V
AH
= 1.5 V
e
TEMP.
a
LIMITS
-40 to +85 °C
UNIT
MIN.
c
TYP.
b
MAX.
c
Analog Switch
Analog signal range
d
V
ANALOG
Full 0 - V+ V
Drain-source
On-resistance
R
DS(on)
V+ = 1.8 V, V
S
= 0.4 V / V+, I
S
= 8 mA
Room - 7 10
Full - - 11
V+ = 2.7 V, V
COM
= 0.8 V / 1.8 V I
COM
= 10 mA
Room - 4.6 5.3
Full - - 5.9
On-resistance matching R
DS(on)
V+ = 2.7 V, V
COM
= 0.8 V / 1.4 V / 1.8 V
I
COM
= 10 mA
Room - 0.02 0.27
Full - - 0.41
On-resistance flatness
d, f
R
flat(on)
Room - 0.62 1
Full - - 1.3
Off leakage current
g
I
S(off)
V+ = 3.3 V, V
S
= 1 V / 3 V
V
COM
= 3 V / 1 V, V
EN
= 0 V
Room -2 0.01 2
nA
Full -5 - 5
COM off leakage current
g
I
COM(off)
Room -2 0.01 2
Full -5 - 5
Channel-on leakage current
g
I
COM(on)
V+ = 3.3 V
V
COM
= V
S
= 1 V / 3 V
Room -2 0.01 2
Full -5 - 5
Digital Control
Input current
d
I
A
or I
EN
V
A/EN
= 0 V or V+, see truth table Full -1 0.05 1 μA
Input high voltage
d
V
AH
or V
ENH
Full 1.5 1.25 -
V
Input low voltage
d
V
AL
or V
ENL
Full - 1 0.5
Digital input capacitance
d
C
IN
Room - 3 - pF
Dynamic Characteristics
Turn-on time t
ON
V
S
= 1.5 V, C
L
= 35 pF, R
L
= 300
Room - 19 29
ns
Full - - 39
Turn-off time t
OFF
Room - 16 26
Full - - 36
Break-before-make time
d
t
BBM
Room 7 12 -
Full 5 - -
Transition time t
trans
V
S
= 1.5 V / 0 V, V
S
= 0 V / 1.5 V, R
L
= 300
Room - 26 41
Full - - 51
Charge injection
d
Q
INJ
C
L
= 1 nF, V
gen
= 1.5 V, R
gen
= 0 Room - -2 - pC
Bandwidth
d
BW C
L
= 5 pF (set up capacitance) Room - 166 - MHz
Off-isolation
d
OIRR R
L
= 50 , C
L
= 5 pF
f = 1 MHz Room - -67 -
dB
f = 10 MHz Room - -52 -
Channel-to-channel crosstalk
d
X
TALK
R
L
= 50 , C
L
= 5 pF
f = 1 MHz Room - -71 -
f = 10 MHz Room - -55 -
Off capacitance
d
C
S(off)
V+ = 2.7 V, f = 1 MHz
Room - 7 -
pFCOM off capacitance
d
C
COM(off)
Room - 27 -
COM on capacitance
d
C
COM(on)
Room - 33 -
Power Supply
Power supply range V+ Full 2.7 - 3.3 V
Power supply current
d
I+ V+ = 2.7 V, V
A/EN
= 0 V or 2.7 V, see truth table Full - - 1 μA

DG2034EDN-T1-GE4

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Gate Drivers 2.5ohm 1.8-5.5V 4:1 Multiplexer
Lifecycle:
New from this manufacturer.
Delivery:
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