DG2034E
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Vishay Siliconix
S17-0388-Rev. A, 20-Mar-17
4
Document Number: 73172
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Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. V
A
, EN = input voltage to perform proper function
f. Difference of min. and max. values
g. Guaranteed by 5 V testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 5 V, ± 10 %, V
AL
= 0.5 V, V
AH
= 2 V
e
TEMP.
a
LIMITS
-40 to +85 °C
UNIT
MIN.
c
TYP.
b
MAX.
c
Analog Switch
Analog signal range
d
V
ANALOG
Full 0 - V+ V
Drain-source
On-resistance
R
DS(on)
V+ = 4.5 V, V
COM
= 0.8 V / 3.5 V
I
COM
= 10 mA
Room - 2.5 3.1
Full - - 4
On-resistance matching R
DS(on)
V+ = 4.5 V, V
COM
= 0.8 V / 2.5 V / 3.5 V
I
COM
= 10 mA
Room - 0.02 0.29
Full - - 0.42
On-resistance flatness
d, f
R
flat(on)
Room - 0.6 0.9
Full - - 1.2
Off leakage current
g
I
S(off)
V+ = 5.5 V, V
S
= 1 V / 4.5 V
V
COM
= 4.5 V / 1 V, V
EN
= 0 V
Room -2 0.17 2
nA
Full -8 - 8
COM off leakage current
g
I
COM(off)
Room -5 0.77 5
Full -15 - 15
Channel-on leakage current
g
I
COM(on)
V+ = 5.5 V, V
COM
= V
S
= 1 V / 4.5 V
Room -5 0.61 5
Full -15 - 15
Power down leakage
d
I
PD
V+ = 0 V, V
D
= 5.5 V, S
X
open Full - 0.01 5
μA
V+ = 0 V, V
S
= 5.5 V, COM, open Full - 0.01 5
Digital Control
Input current
d
I
A
or I
EN
V
A/EN
= 0 V or V+, see truth table Full - 0.01 1 μA
Input high voltage
d
V
AH
or V
ENH
Full 2 1.76 -
V
Input low voltage
d
V
AL
or V
ENL
Full - 1.3 0.5
Digital input capacitance
d
C
IN
Room - 3 - pF
Dynamic Characteristics
Turn-on time t
ON
V
S
= 3 V, C
L
= 35 pF, R
L
= 300
Room - 13 25
ns
Full - - 35
Turn-off time t
OFF
Room - 12 20
Full - - 30
Break-before-make time
d
t
BBM
Room 4 10 -
Full 3 - -
Transition time t
trans
V
S
= 3 V / 0 V, V
S
= 0 V / 3 V, R
L
= 300
Room - 17 32
Full - - 42
Propagation delay
d
t
PD
V+ = 5 V, no R
LOAD
Room - 537 - ps
Charge injection
d
Q
INJ
C
L
= 1 nF, V
gen
= 2.5 V, R
gen
= 0 Room - -2.6 - pC
Bandwidth
d
BW C
L
= 5 pF (set up capacitance) Room - 166 - MHz
Off-isolation
d
OIRR R
L
= 50 , C
L
= 5 pF
f = 1 MHz Room - -67 -
dB
f = 10 MHz Room - -52 -
Channel-to-channel crosstalk
d
X
TALK
R
L
= 50 , C
L
= 5 pF
f = 1 MHz Room - -71 -
f = 10 MHz Room - -55 -
Off capacitance
d
C
S(off)
V+ = 5 V, f = 1 MHz
Room - 7 -
pFCOM off capacitance
d
C
COM(off)
Room - 27 -
COM on capacitance
d
C
COM(on)
Room - 36 -
Power Supply
Power supply range V+ Full 4.5 - 5.5 V
Power supply current
d
I+ V+ = 5.5 V, V
A/EN
= 0 V or 5.5 V, see truth table Full - - 1 μA