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SI7464DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12
Si7464DP
www.vishay.com
Vishay Siliconix
S09-0227-Rev. C, 09-Feb-09
1
Document Number: 72052
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 200 V (D-S) Fast Switching MOSFET
FEATURES
• TrenchFET
®
power MOSFETs
• New low thermal resistance PowerPAK
®
package with low 1.07 mm profile
• PWM optimized for fast switching
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Guaranteed by design, not subject to production testing
c. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
V
DS
(V) 200
R
DS(on)
max. () at V
GS
= 10 V 0.24
R
DS(on)
max. () at V
GS
= 6 V 0.26
Q
g
typ. (nC) 12
I
D
(A) 2.8
Configuration Single
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
Available
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free Si7464DP-T1-E3
Lead (Pb)-free and halogen-free Si7464DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL 10 s STEADY STATE UNIT
Drain-source voltage V
DS
200 200
V
Gate-source voltage V
GS
± 20 ± 20
Continuous drain current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
2.8 1.8
A
T
A
= 70 °C 2.2 1.5
Continuous source current I
S
3.5 1.5
Pulsed drain current I
DM
88
Avalanche current
b
I
AS
33
Single avalanche energy
b
E
AS
0.45 0.45 mJ
Maximum power dissipation
a
T
A
= 25 °C
P
D
4.2 1.8
W
T
A
= 70 °C 2.6 1.1
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
c, d
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a
t 10 s
R
thJA
25 30
°C/WSteady state 60 70
Maximum junction-to-case (drain) Steady state R
thJC
2.9 3.5
Si7464DP
www.vishay.com
Vishay Siliconix
S09-0227-Rev. C, 09-Feb-09
2
Document Number: 72052
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2 - 4 V
Gate-body leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 200 V, V
GS
= 0 V - - 1
μA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 55 °C - - 5
On-state drain current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 8 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 2.8 A - 0.195 0.24
V
GS
= 6 V, I
D
= 2.7 A - 0.210 0.26
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 2.8 A - 8 - S
Diode forward voltage
a
V
SD
I
S
= 3.5 A, V
GS
= 0 V - 0.8 1.2 V
Dynamic
b
Total gate charge Q
g
V
DS
= 100 V, V
GS
= 10 V, I
D
= 2.8 A
-1218
nCGate-source charge Q
gs
-2.5-
Gate-drain charge Q
gd
-3.8-
Gate resistance R
g
-2.5-
Turn-on delay time t
d(on)
V
DD
= 100 V, R
L
= 100
I
D
1 A, V
GEN
= 10 V, R
g
= 6
-1015
ns
Rise time t
r
-1220
Turn-off delay time t
d(off)
-1525
Fall time t
f
-1525
Source-drain reverse recovery time t
rr
I
F
= 3.5 A, di/dt = 100 A/μs - 60 90
Si7464DP
www.vishay.com
Vishay Siliconix
S09-0227-Rev. C, 09-Feb-09
3
Document Number: 72052
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
Capacitance
0
2
4
6
8
02468
V
GS
= 10 V thru 5 V
4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
2
4
6
8
0123456
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 150 °C
25 °C
-55 °C
0.0
0.1
0.2
0.3
0.4
02468
R
DS(on)
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 10 V
0
2
4
6
8
10
036912
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 100 V
I
D
= 2.8 A
0.0 0.2 0.4 0.6 0.8 1.0
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
T
J
= 150 °C
T
J
= 25 °C
0
200
400
600
800
0 20406080
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
iss
C
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P1-P3P4-P6P7-P9P10-P12

SI7464DP-T1-GE3

Mfr. #:
Buy SI7464DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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