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SI7464DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12
Si7464DP
www.vishay.com
Vishay Siliconix
S09-0227-Rev. C, 09-Feb-09
4
Document Number: 72052
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Safe Operating Area
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
- On-Resistance (Normalized)R
DS(on)
V
GS
= 10 V
I
D
= 2.8 A
0.0
0.1
0.2
0.3
0.4
0.5
0246810
R
DS(on)
V - Gate-to-Source Voltage (V)
GS
I
D
= 2.8 A
-1.2
-0.8
-0.4
0.0
0.4
0.8
-50 -25 0 25 50 75 100 125 150
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
= 250 µA
0.001
0
1
50
20
30
10 6000.1
Time (s)
10
40
Power (W)
1000.01
V
DS
- Drain-to-Source Voltage (V)
10
0.1
0.1 1 10 1000
0.001
1
T
A
= 25 °C
Single pulse
- Drain Current (A)I
D
0.01
100
Limited by R
DS(on)
*
I
DM
limited
I
D(on)
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
BVDSS limited
Si7464DP
www.vishay.com
Vishay Siliconix
S09-0227-Rev. C, 09-Feb-09
5
Document Number: 72052
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72052
.
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.02
0.05
Package Information
www.vishay.com
Vishay Siliconix
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK
®
SO-8, (Single/Dual)
DIM.
MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 - 0.05 0 - 0.002
b 0.33 0.41 0.51 0.013 0.016 0.020
c 0.23 0.28 0.33 0.009 0.011 0.013
D 5.05 5.15 5.26 0.199 0.203 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.56 3.76 3.91 0.140 0.148 0.154
D3 1.32 1.50 1.68 0.052 0.059 0.066
D4 0.57 typ. 0.0225 typ.
D5 3.98 typ. 0.157 typ.
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 5.79 5.89 5.99 0.228 0.232 0.236
E2 3.48 3.66 3.84 0.137 0.144 0.151
E3 3.68 3.78 3.91 0.145 0.149 0.154
E4 0.75 typ. 0.030 typ.
e 1.27 BSC 0.050 BSC
K 1.27 typ. 0.050 typ.
K1 0.56 - - 0.022 - -
H 0.51 0.61 0.71 0.020 0.024 0.028
L 0.51 0.61 0.71 0.020 0.024 0.028
L1 0.06 0.13 0.20 0.002 0.005 0.008
0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
3.
Dimensions exclusive of mold flash and cutting burrs.
1.
Notes
2
Inch will govern.
Dimensions exclusive of mold gate burrs.
Backside View of Single Pad
Backside View of Dual Pad
Detail Z
D
D1
D2
c
θ
A
θ
E1
θ
D1
E2
D2
e
b
1
2
3
4
H
4
3
2
1
θ
1
2
3
4
b
L
D2
D3 (2x)
Z
A1
K1
K
D
E
W
L1
D5
E3
D4
E4
E4
K
L
H
E2
D4
D5
M
E3
2
2
P1-P3P4-P6P7-P9P10-P12

SI7464DP-T1-GE3

Mfr. #:
Buy SI7464DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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