2007-04-20
BFP740F
1
1
2
4
3
NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.75 dB at 6 GHz
• High maximum stable gain
G
ms
= 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz f
T
-Silicon Germanium technology
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
1
34
2
Direction of Unreeling
Top View
XYs
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP740F R7s
1=B 2=E 3=C 4=E - - TSFP-4
1
Pb-containing package may be available upon special request