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BFP740FH6327XTSA1

P1-P3P4-P6P7-P9P10-P10
2007-04-20
BFP740F
4
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
384.4 aA
VAF =
400 V
NE =
1.586 -
VAR =
1.28 V
NC =
1.5 -
RBM =
1.69
Ω
CJE =
220 fF
TF =
2.1 ps
ITF =
290 mA
VJC =
550 mV
TR =
13 ps
MJS =
180 m
XTI =
910 m
AF = 1 -
BF = 1.1
k
IKF = 512.1
mA
BR = 62
-
IKR = 5
mA
RB = 3.23 Ω
RE = 90 mΩ
VJE = 590
mV
XTF = 3
-
PTF = 100
mdeg
MJC = 152
m
CJS = 79.7
fF
XTB = -2.2
-
FC = 950
m
KF = 0 -
NF =
1.018 -
ISE =
4.296 fA
NR =
1-
ISC =
3.85 fA
IRB =
10 A
RC =
6.88
Ω
MJE =
70 m
VTF =
1.32 V
CJC =
99.5 fF
XCJC =
10 m
VJS =
570 mV
EG =
1.11 eV
TNOM
298 K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
LBC =
0.1
nH
LCC =
0.2
nH
LEC =
20
pH
LBB = 0.411 nH
LCB = 0.696 nH
LEB = 21 pH
CBEC =
0.1
pF
CBCC =
1
fF
CES =
0.34
pF
CBS =
39
fF
CCS =
75
fF
CCEO =
0.177
pF
CBEO =
92
fF
CCEI = 0.217 pF
CBEI = 52 fF
REC
=2 Ω
RBS =
3.5
kΩ
RCS = 1.65 kΩ
RES = 90 Ω
B C
E
CCEOCBEO
CCEI
CBEI
CBEC
CBCC
S
C
B
E
LBC
LCC
LEC
CBS
RCS
RES
LBB LCB
LEB
RBS
CCS
CES
REC
BFP740F_Chip
Valid up to 6GHz
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
2007-04-20
BFP740F
5
Total power dissipation P
tot
= ƒ(T
S
)
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
20
40
60
80
100
120
140
mW
180
P
tot
Permissible Pulse Load R
thJS
= ƒ(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Pulse Load
P
totmax
/P
totDC
= ƒ(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance C
cb
= ƒ (V
CB
)
f = 1 MHz
0 2 4 6 8 10 12
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
V
CB
[V]
C
cb
[pF]
2007-04-20
BFP740F
6
Third order Intercept Point IP
3
= ƒ (I
C
)
(Output,
Z
S
= Z
L
= 50 Ω )
V
CE
= parameter, f = 900 MHz
0 5 10 15 20 25 30 35
0
3
6
9
12
15
18
21
24
27
30
I
C
[mA]
IP
3
[dBm]
1.00V
2.00V
3.00V
4.00V
Transition frequency f
T
= ƒ(I
C
)
V
CE
= parameter in V, f = 2 GHz
0 5 10 15 20 25 30 35
0
5
10
15
20
25
30
35
40
45
50
I
C
[mA]
f
T
[GHz]
2V to 4V
1.00V
0.75V
0.50V
Power gain G
ma
, G
ms
= ƒ (f)
V
CE
= 3 V, I
C
= 25 mA
0 1 2 3 4 5 6
5
10
15
20
25
30
35
40
45
50
55
f [GHz]
[GHz]
G [dB]
G
ms
G
ma
|S
21
|
2
Power gain G
ma
, G
ms
= ƒ (I
C
)
V
CE
= 3 V
f = parameter in GHz
0 5 10 15 20 25 30 35
10
12
14
16
18
20
22
24
26
28
30
32
34
I
C
[mA]
G [dB]
6.00GHz
5.00GHz
4.00GHz
3.00GHz
2.40GHz
1.80GHz
0.90GHz
P1-P3P4-P6P7-P9P10-P10

BFP740FH6327XTSA1

Mfr. #:
Buy BFP740FH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors RF BIP TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
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