TBD62003AFG,EL

TBD62003A series, TBD62004A series
2015-07-24
1
©2015 Toshiba Corporation
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62003APG, TBD62003AFG, TBD62003AFNG, TBD62003AFWG
TBD62004APG, TBD62004AFG, TBD62004AFNG, TBD62004AFWG
7channel sink type DMOS transistor array
TBD62003A series and TBD62004A series are DMOS
transistor array with 7 circuits. It has a clamp diode for
switching inductive loads built-in in each output. Please be
careful about thermal conditions during use.
Features
7 circuits built-in
High voltage : V
OUT
= 50 V (MAX)
High current : I
OUT
= 500 mA/ch (MAX)
Input voltage(output on) : TBD62003A series 2.5 V (MIN)
TBD62004A series 7.0 V (MIN)
Input voltage(output off) : TBD62003A series 0.6 V (MAX)
TBD62004A series 1.0 V (MAX)
Package : PG type DIP16-P-300-2.54A
FG type SOP16-P-225-1.27
FNG type SSOP16-P-225-0.65B
FWG type P-SOP16-0410-1.27-002
Pin connection (top view)
Pin connection may be simplified for explanatory purpose.
TBD62003APG,TBD62004APG
DIP16-P-300-2.54A
TBD62003AFG,TBD62004AFG
SOP16-P-225-1.27
TBD62003AFNG,TBD62004AFNG
SSOP16-P-225-0.65B
TBD62003AFWG,TBD62004AFWG
P-SOP16-0410-1.27-002
Weight
DIP1
6-P-300-2.54A : 1.11 g (Typ.)
SOP1
6-P-225-1.27 : 0.16 g (Typ.)
S
SOP16-P-225-0.65B : 0.07 g (Typ.)
P-SOP16-0410-1.27-002 : 0.15 g (Typ.)
TBD62003A series, TBD62004A series
2015-07-24
2
©2015 Toshiba Corporation
Pin explanations
Pin No. Pin name Function
1
I1
Input pin
2
I2
Input pin
3
I3
Input pin
4
I4
Input pin
5
I5
Input pin
6
I6
Input pin
7
I7
Input pin
8
GND
GND pin
9
COMMON
Common pin
10
O7
Output pin
11
O6
Output pin
12
O5
Output pin
13
O4
Output pin
14
O3
Output pin
15
O2
Output pin
16
O1
Output pin
Equivalent circuit (each driver)
Equivalent circuit may be simplified for explanatory purpose.
Clamp
INPUT
COMMON
OUTPUT
Clamp diode
TBD62003A series, TBD62004A series
2015-07-24
3
©2015 Toshiba Corporation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Output voltage
V
OUT
50
V
COMMON pin voltage
V
COM
0.5 to 50
V
Output current
I
OUT
500
mA/ch
Input voltage
V
IN
0.5 to 30
V
Clamp diode reverse voltage
V
R
50
V
Clamp diode forward current
I
F
500
mA
Power
dissipation
PG (Note 1)
P
D
1.47
W
FG (Note 2)
0.625
FNG (Note 3)
0.78
FWG (Note 4)
1.25
Operating temperature
T
opr
40 to 85
°C
Storage temperature
T
stg
55 to 150
°C
Note 1: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C.
Note 2: On PCB (Size: 30 mm × 30 mm × 1.6 mm, Cu area: 50%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 5 mW/°C.
Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 6.24 mW/°C.
Note 4: On PCB (JEDEC 2s2p).
When Ta exceeds 25°C, it is necessary to do the derating with 10 mW/°C.

TBD62003AFG,EL

Mfr. #:
Manufacturer:
Toshiba
Description:
Gate Drivers DMOS Transistor Array 7-CH, 50V/0.5A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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