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TBD62003AFG,EL

P1-P3P4-P6P7-P9P10-P11
TBD62003A series, TBD62004A series
2015-07-24
4
©2015 Toshiba Corporation
Operating Ranges (Ta = −40 to 85°C)
Characteristics Symbol
Condition Min Typ. Max Unit
Output voltage
V
OUT
―
―
―
50
V
COMMON pin voltage
V
COM
―
0
―
50
V
Output
current
PG(Note 1)
I
OUT
1 circuits ON, Ta = 25°C
0
―
400
mA/ch
t
pw
= 25 ms
7 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10%
0
―
400
Duty = 50% 0 ― 190
FG(Note 2)
1 circuits ON, Ta = 25°C
0
―
400
t
pw
= 25 ms
7 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10%
0
―
270
Duty = 50% 0 ― 120
FNG(Note 3)
1 circuits ON, Ta = 25°C
0
―
400
t
pw
= 25 ms
7 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10%
0
―
300
Duty = 50% 0 ― 130
FWG(Note 4)
1 circuits ON, Ta = 25°C
0
―
400
t
pw
= 25 ms
7 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10%
0
―
390
Duty = 50% 0 ― 170
Input voltage
(Output on)
TBD62003A
series
V
IN
(ON)
I
OUT
= 100 mA or upper, V
OUT
= 2 V
2.5 ― 25
V
TBD62004A
series
I
OUT
= 100 mA or upper, V
OUT
= 2 V
7.0 ― 25
Input voltage
(Output off)
TBD62003A
series
V
IN
(OFF)
I
OUT
= 100 μA or less, V
OUT
= 2 V 0 ― 0.6
V
TBD62004A
series
I
OUT
= 100 μA or less, V
OUT
= 2 V 0 ― 1.0
Clamp diode forward current
I
F
―
―
―
400
mA
Note 1: Device alone.
Note 2: On PCB (Size: 30 mm × 30 mm × 1.6 mm, Cu area: 50%, single-side glass epoxy).
Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy).
Note 4: On PCB (JEDEC 2s2p).
TBD62003A series, TBD62004A series
2015-07-24
5
©2015 Toshiba Corporation
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics Symbol
Test
Circuit
Condition Min Typ. Max Unit
Output leakage current I
leak
1
V
OUT
= 50V,
Ta = 85 °C
V
IN
= 0 V
― ― 1.0 μA
Output voltage
(Output
ON-resistance)
TBD62003A
series
V
DS
(R
ON)
2
I
OUT
= 350 mA,
V
IN
=5.0V
―
0.7
(2.0)
1.14
(3.25)
V
(Ω)
I
OUT
= 200 mA,
V
IN
=5.0V
―
0.4
(2.0)
0.65
(3.25)
I
OUT
= 100 mA,
V
IN
=5.0V
―
0.2
(2.0)
0.325
(3.25)
TBD62004A
series
I
OUT
= 350 mA,
V
IN
=7.0V
―
0.7
(2.0)
1.14
(3.25)
I
OUT
= 200 mA,
V
IN
=7.0V
―
0.4
(2.0)
0.65
(3.25)
I
OUT
= 100 mA,
V
IN
=7.0V
―
0.2
(2.0)
0.325
(3.25)
Input current
(Output on)
TBD62003A
series
I
IN (ON)
3
V
IN
= 2.5 V ― ― 0.1
mA
TBD62004A
series
V
IN
= 7.0 V ― ― 0.5
Input current(Output off)
I
IN (OFF)
4
V
IN
= 0 V, Ta = 85°C
―
―
1.0
μA
Input voltage
(Output on)
TBD62003A
series
V
IN (ON)
5
I
OUT
= 100 mA,
V
OUT
= 2 V
― ― 2.5
V
TBD62004A
series
― ― 7.0
Clamp diode
reverse current
I
R
6
V
R
= 50 V,
Ta = 85°C
― ― 1.0 μA
Clamp diode
forward voltage
V
F
7 I
F
= 350 mA ― ― 2.0 V
Turn−on delay
t
ON
8
V
OUT
= 50 V
R
L
= 125 Ω
C
L
= 15 pF
―
0.4
―
μs
Turn−off delay t
OFF
― 0.8 ―
TBD62003A series, TBD62004A series
2015-07-24
6
©2015 Toshiba Corporation
Test circuit
1. I
leak
2. V
DS
(R
ON
)
3. I
IN
(ON)
4. I
IN
(OFF)
5. V
IN
(ON)
6. I
R
7. V
F
Test circuit may be simplified for explanatory purpose.
COMMON
OUTPUT
INPUT
GND
I
OUT
V
IN
V
DS
R
ON
= V
DS
/ I
OUT
COMMON
OUTPUT
INPUT
GND
I
OUT
V
IN(ON)
V
OUT
COMMON
OUTPUT
INPUT
GND
I
R
V
R
COMMON
OUTPUT
INPUT
GND
I
F
V
F
COMMON
OUTPUT
INPUT
GND
V
OUT
I
leak
COMMON
INPUT
GND
V
IN
I
IN(ON)
OUTPUT
COMMON
INPUT
GND
I
IN(OFF)
OUTPUT
P1-P3P4-P6P7-P9P10-P11

TBD62003AFG,EL

Mfr. #:
Buy TBD62003AFG,EL
Manufacturer:
Toshiba
Description:
Gate Drivers DMOS Transistor Array 7-CH, 50V/0.5A
Lifecycle:
New from this manufacturer.
Delivery:
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