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STGW40NC60V

P1-P3P4-P6P7-P9P10-P10
1/10July 2004
STGW40NC60V
N-CHANNEL 50A - 600V - TO-247
Very Fast PowerMESH™ IGBT
Table 1: General Features
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION UP TO
50 KHz
■ LOSSES INCLUDE DIODE RECOVERY
ENERGY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOWER C
RES
/ C
IES
RATIO
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
™
IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ UPS
■ MOTOR DRIVERS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE V
CES
V
CE(sat)
(Max)
@25°C
I
C
@100°C
STGW40NC60V 600 V < 2.5 V 50 A
1
2
3
Max Clip Pressure: 150 N/mm
2
Weight: 4.41gr ± 0.01
TO-247
SALES TYPE MARKING PACKAGE PACKAGING
STGW40NC60V GW40NC60V TO-247 TUBE
Rev. 10
Obsolete Product(s) - Obsolete Product(s)
STGW40NC60V
2/10
Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
(#) Calculated according to the iterative formula:
Symbol Parameter Value Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Reverse Battery Protection 20
V
V
GE
Gate-Emitter Voltage ± 20
V
I
C
Collector Current (continuous) at 25°C (#) 80
A
I
C
Collector Current (continuous) at 100°C (#) 50
A
I
CM
(1)
Collector Current (pulsed) 200 A
P
TOT
Total Dissipation at T
C
= 25°C
260
W
Derating Factor 2.08 W/°C
T
stg
Storage Temperature
– 55 to 150 °C
T
j
Operating Junction Temperature
Min. Typ. Max. Unit
Rthj-case Thermal Resistance Junction-case 0.48 °C/W
Rthj-amb Thermal Resistance Junction-ambient 50 °C/W
T
L
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 1 mA, V
GE
= 0 600 V
I
CES
Collector-Emitter Leakage
Current (V
CE
= 0)
V
GE
= Max Rating
Tc =25 °C
Tc=125°C
10
1
µA
mA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20 V , V
CE
= 0 ± 100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold Voltage V
CE
= V
GE
, I
C
= 250 µA 3.75 5.75 V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15 V, I
C
= 40A, Tj= 25°C
V
GE
= 15 V, I
C
= 40A,
Tj= 125°C
1.9
1.7
2.5 V
V
I
C
T
C
()
T
JMAX
T
C
–
R
THJ C–
V
CESAT MAX()
T
C
I
C
,()×
---------- ---------- -------------------- ---------- -------------------- ---------- --------------- ---
=
Obsolete Product(s) - Obsolete Product(s)
3/10
STGW40NC60V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
(3)Turn-off losses include also the tail of the collector current.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1)
Forward Transconductance
V
CE
= 15 V
,
I
C
= 20 A 20 S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0 4550
350
105
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 390 V, I
C
= 40 A,
V
GE
= 15V,
(see Figure 20)
214
30
96
nC
nC
nC
I
CL
Turn-Off SOA Minimum
Current
V
clamp
= 480 V , Tj = 150°C
R
G
= 100 Ω, V
GE
= 15V
200 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
on
Eon
(2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390 V, I
C
= 40 A
R
G
=3.3Ω, V
GE
= 15V, Tj= 25°C
(see Figure 18)
43
17
2060
330 450
ns
ns
A/µs
µJ
t
d(on)
t
r
(di/dt)
on
Eon
(2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390 V, I
C
= 40 A
R
G
=3.3Ω, V
GE
= 15V, Tj=
125°C
(see Figure 18)
42
19
1900
640
ns
ns
A/µs
µJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390 V, I
C
= 40 A,
R
GE
= 3.3 Ω , V
GE
= 15 V
T
J
= 25 °C
(see Figure 18)
25 ns
t
d
(
off
)
Turn-off Delay Time 140 ns
t
f
Current Fall Time 45 ns
E
off
(3)
Turn-off Switching Loss 720 970
µJ
E
ts
Total Switching Loss 1050 1420
µJ
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390 V, I
C
= 40 A,
R
GE
= 3.3 Ω , V
GE
= 15 V
Tj = 125 °C
(see Figure 18)
60 ns
t
d
(
off
)
Turn-off Delay Time 170 ns
t
f
Current Fall Time 77 ns
E
off
(3)
Turn-off Switching Loss 1400
µJ
E
ts
Total Switching Loss 2040
µJ
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P10

STGW40NC60V

Mfr. #:
Buy STGW40NC60V
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-Ch 600 Volt 50 Amp
Lifecycle:
New from this manufacturer.
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