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Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
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STGW40NC60V
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 13: Total Switching Losses vs Temper-
ature
Figure 14: Total Switching Losses vs Collector
Current
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STGW40NC60V
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Figure 15: Thermal Impedance
Figure 16: Turn-Off SOA
Figure 17: Ic vs Frequency
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
f
MAX
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
P
D
= T / R
THJ-C
considering T = T
J
- T
C
= 125 °C- 75 °C = 50°C
2) The conduction losses are:
P
C
= I
C
* V
CE(SAT)
* δ
with 50% of duty cycle, V
CESAT
typical value
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
P
SW
= (E
ON
+ E
OFF
) * freq.
4) Typical values @ 125°C for switching losses are
used (test conditions: V
CE
= 390V, V
GE
= 15V,
R
G
= 3.3 Ohm). Furthermore, diode recovery en-
ergy is included in the E
ON
(see note 2), while the
tail of the collector current is included in the E
OFF
measurements (see note 3).
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STGW40NC60V

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-Ch 600 Volt 50 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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