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VS-GB55NA120UX

P1-P3P4-P6P7-P9
VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
Revision: 17-Oct-16
1
Document Number: 95855
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
“High Side Chopper” IGBT SOT-227
(Ultrafast IGBT), 50 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
•HEXFRED
®
clamping diode
•Positive V
CE(on)
temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 50 A at 92 °C
V
CE(on)
typical at 50 A, 25 °C 3.3 V
Package SOT-227
Circuit High side switch
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 84
A
T
C
= 80 °C 57
Pulsed collector current I
CM
150
Clamped inductive load current I
LM
150
Diode continuous forward current I
F
T
C
= 25 °C 87
T
C
= 80 °C 59
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 310
Gate to emitter voltage V
GE
± 20 V
Power dissipation, IGBT P
D
T
C
= 25 °C 431
W
T
C
= 80 °C 242
Power dissipation, diode P
D
T
C
= 25 °C 338
T
C
= 80 °C 190
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
Revision: 17-Oct-16
2
Document Number: 95855
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 500 μA 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 25 A - 2.5 2.8
V
GE
= 15 V, I
C
= 50 A - 3.3 -
V
GE
= 15 V, I
C
= 25 A, T
J
= 125 °C - 3.0 -
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 4.03 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 4.0 5.5 7.1
Temperature coefficient of
threshold voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - -12.9 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 8 50 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.15 - mA
Diode reverse breakdown voltage V
BR
I
R
= 1 mA 1200 - - V
Diode forward voltage drop V
FM
I
F
= 25 A, V
GE
= 0 V - 2.11 2.42
V
I
F
= 50 A, V
GE
= 0 V - 2.72 -
I
F
= 25 A, V
GE
= 0 V, T
J
= 125 °C - 2.04 -
I
F
= 50 A, V
GE
= 0 V, T
J
= 125 °C - 2.83 -
Diode reverse leakage current I
RM
V
R
= 1200 V - 4 50 μA
T
J
= 125 °C, V
R
= 1200 V - 0.8 - mA
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V
- 400 -
nCGate to emitter charge (turn-on) Q
ge
-43-
Gate to collector charge (turn-on) Q
gc
- 187 -
Turn-on switching loss E
on
I
C
= 50 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 4.7 
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
-1.87-
mJ
Turn-off switching loss E
off
-0.83-
Total switching loss E
tot
-2.7-
Turn-on switching loss E
on
I
C
= 50 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 4.7 
L = 500 μH, T
J
= 125 °C
-3.43-
Turn-off switching loss E
off
-1.29-
Total switching loss E
tot
-4.72-
Turn-on delay time t
d(on)
- 147 -
ns
Rise time t
r
-35-
Turn-off delay time t
d(off)
- 186 -
Fall time t
f
- 119 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 150 A, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V
Fullsquare
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
- 129 - ns
Diode peak reverse current I
rr
-11- A
Diode recovery charge Q
rr
- 710 - nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V,
T
J
= 125 °C
- 208 - ns
Diode peak reverse current I
rr
-17- A
Diode recovery charge Q
rr
- 1768 - nC
VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
Revision: 17-Oct-16
3
Document Number: 95855
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Output Characteristics, V
GE
= 15V
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-40 - 150 °C
Junction to case
IGBT
R
thJC
- - 0.29
°C/WDiode - - 0.37
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0 102030405060708090
0
160
100
120
140
20
40
60
80
DC
I
C
(A)
V
CE
(V)
1 10 100 1000 10 000
0.01
0.1
1
1000
10
100
0
25
50
75
100
125
150
175
200
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
I
C
(A)
V
CE
(V)
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.001
0.01
0.1
1
200 400 600 800 1000 1200
I
CES
(mA)
V
CES
(V)
T
J
= 25 °C
T
J
= 125 °C
P1-P3P4-P6P7-P9

VS-GB55NA120UX

Mfr. #:
Buy VS-GB55NA120UX
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Output & SW Modules SOT-227 IGBT
Lifecycle:
New from this manufacturer.
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