VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
Revision: 17-Oct-16
4
Document Number: 95855
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V
GE
= 15 V
Fig. 7 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Fig. 8 - Typical Diode Forward Characteristics
Fig. 9 - Typical IGBT Energy Losses vs. I
C
T
J
= 125 °C, V
CC
= 600 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, V
CC
= 600 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7
1.5
2.5
3.5
4.5
5.5
6.5
7.5
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
GEth
(V)
I
C
(mA)
T
J
= 25 °C
T
J
= 125 °C
V
CE
(V)
T
J
(°C)
10 50 9030 70 130110 150
2
6
4
5
3
100 A
50 A
25 A
0
20
40
60
80
100
120
140
160
0 20406080100
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
DC
0
25
50
75
100
125
150
175
200
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
I
F
(A)
V
FM
(V)
T
J
= 25 °C
T
J
= 125 °C
0
1.0
2.0
3.0
4.0
10 20 30 40 50
Energy (mJ)
I
C
(A)
E
on
E
off
0.01
0.1
1
10 20 30 40 50
Switching Time (ns)
I
C
(A)
t
r
t
f
t
d(on)
t
d(off)
