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OP295GS-REEL

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Dual/Quad Rail-to-Rail
Operational Amplifiers
OP295/OP495
Rev. G
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2009 Analog Devices, Inc. All rights reserved.
FEATURES
Rail-to-rail output swing
Single-supply operation: 3 V to 36 V
Low offset voltage: 300 μV
Gain bandwidth product: 75 kHz
High open-loop gain: 1000 V/mV
Unity-gain stable
Low supply current/per amplifier: 150 μA maximum
APPLICATIONS
Battery-operated instrumentation
Servo amplifiers
Actuator drives
Sensor conditioners
Power supply control
GENERAL DESCRIPTION
Rail-to-rail output swing combined with dc accuracy are the
key features of the OP495 quad and OP295 dual CBCMOS
operational amplifiers. By using a bipolar front end, lower noise
and higher accuracy than those of CMOS designs have been
achieved. Both input and output ranges include the negative
supply, providing the user with zero-in/zero-out capability. For
users of 3.3 V systems such as lithium batteries, the OP295/OP495
are specified for 3 V operation.
Maximum offset voltage is specified at 300 µV for 5 V operation,
and the open-loop gain is a minimum of 1000 V/mV. This yields
performance that can be used to implement high accuracy systems,
even in single-supply designs.
The ability to swing rail-to-rail and supply 15 mA to the load
makes the OP295/OP495 ideal drivers for power transistors and
H bridges. This allows designs to achieve higher efficiencies and
to transfer more power to the load than previously possible
without the use of discrete components.
For applications such as transformers that require driving
inductive loads, increases in efficiency are also possible.
Stability while driving capacitive loads is another benefit of this
design over CMOS rail-to-rail amplifiers. This is useful for
driving coax cable or large FET transistors. The OP295/OP495
are stable with loads in excess of 300 pF.
PIN CONFIGURATIONS
OUT A 1
–IN A 2
+IN A
3
V–
4
V+8
OUT B7
–IN B
6
+IN B
5
OP295
TOP VIEW
(Not to Scale)
00331-001
Figure 1. 8-Lead Narrow-Body SOIC_N
S Suffix (R-8)
OUT A
1
–IN A
2
+IN A
3
V–
4
V+
8
OUT B
7
–IN B
6
+IN B
5
OP295
0
0331-002
Figure 2. 8-Lead PDIP
P Suffix (N-8)
OUT A
1
–IN A
2
+IN A
3
V+
4
OUT D
14
–IN D
13
+IN D
12
V–
11
+IN B
5
–IN B
6
OUT B
7
+IN C
10
–IN C
9
OUT C
8
OP495
00331-003
Figure 3. 14-Lead PDIP
P Suffix (N-14)
OUT A
1
–IN A
2
+IN A
3
V+
4
OUT D
16
–IN D
15
+IN D
14
V–
13
+IN B
5
+IN C
12
–IN B
6
–IN C
11
OUT B
7
OUT C
10
NC
8
NC
9
NC = NO CONNECT
OP495
TOP VIEW
(Not to Scale)
00331-004
Figure 4. 16-Lead SOIC_W
S Suffix (RW-16)
The OP295 and OP495 are specified over the extended indus-
trial (−40°C to +125°C) temperature range. The OP295 is
available in 8-lead PDIP and 8-lead SOIC_N surface-mount
packages. The OP495 is available in 14-lead PDIP and 16-lead
SOIC_W surface-mount packages.
OP295/OP495
Rev. G | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Pin Configurations ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Characteristics ............................................................. 3
Absolute Maximum Ratings ............................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution .................................................................................. 5
Typical Performance Characteristics ............................................. 6
Applications ....................................................................................... 9
Rail-to-Rail Application Information ........................................ 9
Low Drop-Out Reference ............................................................ 9
Low Noise, Single-Supply Preamplifier ..................................... 9
Driving Heavy Loads ................................................................. 10
Direct Access Arrangement ...................................................... 10
Single-Supply Instrumentation Amplifier .............................. 10
Single-Supply RTD Thermometer Amplifier ......................... 11
Cold Junction Compensated, Battery-Powered
Thermocouple Amplifier .......................................................... 11
5 V Only, 12-Bit DAC That Swings 0 V to 4.095 V .................... 11
4 mA to 20 mA Current-Loop Transmitter ............................ 12
3 V Low Dropout Linear Voltage Regulator ............................. 12
Low Dropout, 500 mA Voltage Regulator with Foldback
Current Limiting ........................................................................ 12
Square Wave Oscillator .............................................................. 13
Single-Supply Differential Speaker Driver .............................. 13
High Accuracy, Single-Supply, Low Power Comparator ...... 13
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 16
REVISION HISTORY
8/09—Rev. F to Rev. G
Added Figure 18 ................................................................................ 8
Updated Outline Dimensions ....................................................... 17
3/08—Rev. E to Rev. F
Changes to Offset Voltage Unit in Table 1 .................................... 3
Updated Outline Dimensions ....................................................... 14
Changes to Ordering Guide .......................................................... 16
5/06—Rev. D to Rev. E
Updated Format .................................................................. Universal
Changes to Features .......................................................................... 1
Changes to Pin Connections ........................................................... 1
Updated Outline Dimensions ....................................................... 14
Changes to Ordering Guide .......................................................... 15
2/04—Rev. C to Rev. D
Changes to General Description .................................................... 1
Changes to Specifications ................................................................ 2
Changes to Absolute Maximum Ratings ....................................... 4
Changes to Ordering Guide ............................................................ 4
Updated Outline Dimensions ....................................................... 12
3/02—Rev. B to Rev. C
Figure changes to Pin Connections ................................................ 1
Deleted OP295GBC and OP495GBC from Ordering Guide ...... 3
Deleted Wafer Test Limits Table ...................................................... 3
Changes to Absolute Maximum Ratings ........................................ 4
Deleted Dice Characteristics ............................................................ 4
OP295/OP495
Rev. G | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V
S
= 5.0 V, V
CM
= 2.5 V, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
30 300 µV
−40°C ≤ T
A
≤ +125°C 800 µV
Input Bias Current I
B
8 20 nA
−40°C ≤ T
A
≤ +125°C 30 nA
Input Offset Current I
OS
±1 ±3 nA
−40°C ≤ T
A
≤ +125°C ±5 nA
Input Voltage Range V
CM
0 4.0 V
Common-Mode Rejection Ratio CMRR 0 V ≤ V
CM
≤ 4.0 V, −40°C ≤ T
A
≤ +125°C 90 110 dB
Large Signal Voltage Gain A
VO
R
L
= 10 kΩ, 0.005 ≤ V
OUT
≤ 4.0 V 1000 10,000 V/mV
R
L
= 10 kΩ, −40°C ≤ T
A
≤ +125°C 500 V/mV
Offset Voltage Drift ∆V
OS
/∆T 1 5 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
R
L
= 100 kΩ to GND 4.98 5.0 V
R
L
= 10 kΩ to GND 4.90 4.94 V
I
OUT
= 1 mA, −40°C ≤ T
A
≤ +125°C 4.7 V
Output Voltage Swing Low V
OL
R
L
= 100 kΩ to GND 0.7 2 mV
R
L
= 10 kΩ to GND 0.7 2 mV
I
OUT
= 1 mA, −40°C ≤ T
A
≤ +125°C 90 mV
Output Current I
OUT
±11 ±18 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±1.5 V ≤ V
S
≤ ±15 V 90 110 dB
±1.5 V ≤ V
S
≤ ±15 V, –40°C ≤ T
A
≤ +125°C 85 dB
Supply Current per Amplifier I
SY
V
OUT
= 2.5 V, R
L
= ∞, −40°C ≤ T
A
≤ +125°C 150 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θ
O
86 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 1.5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 51 nV/√Hz
Current Noise Density i
n
f = 1 kHz <0.1 pA/√Hz
V
S
= 3.0 V, V
CM
= 1.5 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
100 500 µV
Input Bias Current I
B
8 20 nA
Input Offset Current I
OS
±1 ±3 nA
Input Voltage Range V
CM
0 2.0 V
Common-Mode Rejection Ration CMRR 0 V ≤ V
CM
≤ 2.0 V, −40°C ≤ T
A
≤ +125°C 90 110 dB
Large Signal Voltage Gain A
VO
R
L
= 10 kΩ 750 V/mV
Offset Voltage Drift V
OS
/T 1 µV/°C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

OP295GS-REEL

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Buy OP295GS-REEL
Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps DUAL RAIL TO RAIL OP AMP
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