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LX5510BLQ

P1-P3P4-P6P7-P8
LX5510B
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright © 2004
Rev. 1.0d, 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
DESCRIPTION
The LX5510B is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a two-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). With a single supply of
3.3 volts and a low quiescent current
of 70mA the power gain is 19dB 2.4 –
2.5GHz.
For +19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 135mA total DC
current with the nominal 3.3V bias.
The LX5510B is available in a 16-
pin 3mmx3mm micro-lead package
(MLP). The compact footprint, low
profile, and excellent thermal capability
of the MLP package makes the
LX5510B an ideal solution for medium-
gain power amplifier requirements for
IEEE 802.11b/g applications
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current I
CQ
~70mA
Power Gain ~19dB @ 2.45GHz
and Pout = 19dBm
Total Current 135mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm
2
)
Low Profile (0.9mm)
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16 pin
T
A
(°C)
RoHS Compliant / Pb-free
0 to 70
LX5510BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the
part number. (i.e. LX5510BLQ-TR)
This device is classified as EDS Level 1 in accordance with MIL-
STD-883, Method 3015 (HBM) testing. Appropriate ESD
procedures should be used when handling this device.
L
L
X
X
5
5
5
5
1
1
0
0
B
B
LX5510B
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright © 2004
Rev. 1.0d, 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power...........................................................................................15dBm
Operation Ambient Temperature...................................................-40°C to +85°C
Storage Temperature....................................................................-65°C to +150°C
Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ......260°(+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
THERMAL DATA
LQ
Plastic MLPQ 16-Pin
THERMAL RESISTANCE-JUNCTION TO CASE, θ
JC
10°C/W
THERMAL RESISTANCE-JUNCTION TO AMBIENT, θ
JA
50°C/W
PACKAGE PIN OUT
RF IN
RF IN
VB1
VB2
VCC
RF OUT
RF OUT
VC1
VC2
*
1
2
3
4
5678
9
10
11
12
13 14 15 16
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name Description
RF IN
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first
stage.
VB1 Bias current control voltage for the first stage.
VB2
Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control
voltage (VB1) into a single reference voltage (referred to as V
REF
) through an external resistor bridge.
VCC
Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins,
resulting in a single supply voltage (referred to as V
C
).
RF OUT RF output for the power amplifier.
VC1
Power supply for first stage amplifier. The VC1 feed line should be terminated with a 3.9pF bypass capacitor 50
mil apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined
with VC2 and VCC pins, resulting in a single supply voltage (referred to as V
C
).
VC2
Power supply for second stage amplifier. The VC2 feed line should be driven with a 8.2nH AC blocking inductor
and 1µF bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage
(referred to as V
C
).
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
P
P
A
A
C
C
K
K
A
A
G
G
E
E
D
D
A
A
T
T
A
A
LX5510B
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Copyright © 2004
Rev. 1.0d, 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ T
A
≤ 70°C except where
otherwise noted and the following test conditions: V
C
= 3.3V, V
REF
= 2.88V, I
CQ
= 70mA, T
A
= 25°C
LX5510B
Parameter Symbol Test Conditions
Min Typ Max
Units
`
SECTION HEADER
Frequency Range f 2.4 2.5 GHz
Power Gain at P
OUT
= 19dBm G
P
19 dB
EVM at Pout = 19dBm 64QAM / 54Mbps OFDM 3.0 %
Total Current @ P
OUT
= 19dBm I
C_TOTAL
135 mA
Quiescent Current I
CQ
70 mA
Bias Control Reference Current I
REF
For I
CQ
= 70mA 1.5 mA
Small-Signal Gain S21 19 dB
Gain Flatness ΔS21 Over 100MHz ±0.5 dB
Gain Variation Over Temperature ΔS21 0°C to +70°C ±0.5 dB
Input Return Loss S11 10 dB
Output Return Loss S22 10 dB
Reverse Isolation S12 40 dB
Second Harmonic Pout = 19dBm -55 dBc
Third Harmonic Pout = 19dbm -55 dBc
2
nd
Side Lobe 23 dBm 11 Mbps CCK -50 dBc
Total current Pout=23 dBm 11 Mbps CCK 190 mA
Ramp-On Time t
ON
10 ~ 90% 100 ns
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
P1-P3P4-P6P7-P8

LX5510BLQ

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Manufacturer:
Microchip / Microsemi
Description:
RF Amplifier LX5510BLQ
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