LX5510BLQ

LX5510B
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
Copyright © 2004
Rev. 1.0d, 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
S PARAMETER DATA
EVM DATA WITH 54MB/S64QAM OFDM
m3
50
40
30
20
10
0
-10
-20
-30
-40
-50
01234567
Frequency (GHz)
dB(S(2,2))
dB(S(1,1))
dB(S(2,1))
dB(S(1,2))
m1
Frequency = 2.40GHz
m1 = 20.08
m2
Frequency = 2.50GHz
m2 = 18.93
m3
Frequency = 2.45GHz
m3 = -19.87
m1
m2
V
C
= 3.3V, V
REF
= 2.88V, I
CQ
= 70mA
9
8
7
6
5
4
3
2
1
0
Output Power /(dBm)
EVM_PA /(%)
0 2 4 6 8 10121416182022
160
150
140
130
120
110
100
90
80
70
Current / (mA)
Current 3.3V
EVM PA Only
V
C
= 3.3V, V
REF
= 2.88V, I
CQ
= 70mA
ACP DATA WITH 54MB/S 64 QAM OFDM
SPECTRUM WITH 23DBM 11MB/S CCK
-45.0
-47.5
-50.0
-52.5
-55.0
-57.5
-60.0
Output Power /(dBm)
ACP /(dBc)
0246810121416182022
ACP 30MHz
V
C
= 3.3V, V
REF
= 2.88V, I
CQ
= 70mA
V
C
= 3.3V, V
REF
= 2.88V, I
CQ
= 70mA, I
C
= 190mA
SUPPLY CURRENT WITH 11MB/S CCK
200
175
150
125
100
75
50
Output Power /(dBm)
Current /(mA)
0 2 4 6 8 10 12 14 16 18 20 22 24
11 Mbps CCK Current 3V3
V
C
= 3.3V, V
REF
= 2.88V, I
CQ
= 70MA
C
C
H
H
A
A
R
R
T
T
S
S
LX5510B
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
Copyright © 2004
Rev. 1.0d, 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
EVALUATION BOARD
Recommended BOM
Location Value
C1
2.7pF (0402)
C2
2.4pF (0402)
C3 3.9pF (0402)
C4,C5
1µF (0603)
L1,L2 8.2nH(0402)
R1
350 (0402)
R2
R3
200 (0402)
100 (0402)
TL1 30/22 mil (L/W)
TL2
100/10 mil (L/W)
TL3
60/10 mil (L/W)
Substrate
10 mil GETEK
ε
r
=3.9, tan δ = 0.01
50 Microstrip width: 22 mil
VC
GND
VREF
RF
Output
RF
Input
L1
C4
C3
C1
C5 R1 | R2
R3
C2
L2
E
E
V
V
A
A
L
L
U
U
A
A
T
T
I
I
O
O
N
N
LX5510B
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
Copyright © 2004
Rev. 1.0d, 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
PACKAGE DIMENSIONS
LQ
16-Pin MLPQ 3x3
e
D
E
b
E2
D2
A
A3
A1
L
K
Pin 1 Indicator
or
or
Or
e
D
E
b
E2
A
A1
L
K
D2
L1
MILLIMETERS INCHES
Dim
MIN MAX MIN MAX
A 0.80 1.00 0.031 0.039
A1 0 0.05 0 0.002
A3 0.20 REF 0.008 REF
b 0.18 0.30 0.007 0.012
D 3.00 BSC 0.118 BSC
E 3.00 BSC 0.118 BSC
e 0.50 BSC 0.020 BSC
D2 1.30 1.55 0.051 0.061
E2 1.30 1.55 0.051 0.061
K 0.2 - 0.008 -
L 0.35 0.50 0.012 0.020
L1 - 0.15 - 0.006
Note:
1. Dimensions do not include mold flash or
protrusions; these shall not exceed 0.155mm(.006”)
on any side. Lead dimension shall not include
solder coverage.
2. Due to multiple qualified assembly sub-contractors
either package (with different pin one indicators)
may be shipped. Package type will be consistent
within the smallest individual container.
M
M
E
E
C
C
H
H
A
A
N
N
I
I
C
C
A
A
L
L
S
S

LX5510BLQ

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
RF Amplifier LX5510BLQ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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