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VUO120-16NO1

P1-P3P4-P4
© 2007 IXYS All rights reserved
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
20071019a
p h a s e o u t
I
R
V
R
= V
RRM
,T
VJ
= 25°C 0.3 mA
V
R
= V
RRM
,T
VJ
= 150°C 5 mA
V
F
I
F
= 150 A, T
VJ
= 25°C VUO 120 1.59 V
VUO 155 1.49 V
V
F0
For power-loss calculations onlyVUO 120 0.80 V
VUO 155 0.75 V
r
T
T
VJ
= 150°C VUO 120 6.1 mΩ
VUO 155 4.6 mΩ
R
thJC
per diode VUO 120 1.0 K/W
VUO 155 0.8 K/W
R
thJH
VUO 120 1.3 K/W
VUO 155 1.1 K/W
R
25
(option) Siemens S 891/2,2/+9 2.2 kΩ
Symbol Conditions Maximum Ratings
VUO 120 VUO155
V
RRM
1200/1600 1200/1600 V
I
dAVM
T
C
= 75
°
C, sinusoidal 120° 121 157 A
I
FSM
T
VJ
= 45°C, t = 10 ms, V
R
= 0 V 650 850 A
T
VJ
= 150°C, t = 10 ms, V
R
= 0 V 580 760 A
I
2
t T
VJ
= 45°C, t = 10 ms, V
R
= 0 V 2110 3610 A
T
VJ
= 150°C, t = 10 ms, V
R
= 0V 1680 2880 A
P
tot
T
C
= 25°C per diode 150 190 W
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz t = 1 min 3000 V~
I
ISOL
≤ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M5) 2-2.5 Nm
(10-32 unf) 18-22 lb.in.
d
S
Creep distance on surface 12.7 mm
d
A
Strike distance in air 9.4 mm
a Maximum allowable acceleration 50 m/s
2
Weight typ. 80 g
I
dAVM
= 121 / 157 A
V
RRM
= 1200-1600 V
V
RRM
Type V
RRM
Type
V V
1200 VUO 120-12 NO1 1600 VUO 120-16 NO1
1200 VUO 155-12 NO1 1600 VUO 155-16 NO1
Features
• Soldering connections for PCB
mounting
• Isolation voltage 3600 V~
• Convenient package outline
• UL registered E 72873
• Case and potting UL94 V-0
Applications
• Input Rectifier for Drive Inverters
Advantages
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
VUO 120
VUO 155
Three Phase
Rectifier Bridge
pin configuration see outlines
option
W5
W6
M1/O1
M10/O10
K6
E6
A6
Type Recommended
replacement
VUO120-12NO1 VUO120-12NO2T
VUO120-16NO1 VUO120-16NO2T
VUO155-12NO1 VUO120-12NO2T
VUO155-16NO1 VUO120-16NO2T
© 2007 IXYS All rights reserved
2 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
20071019a
p h a s e o u t
±0.3
±0.3±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.15
±0.3
R
R
R1
80
78.5
93
17
13
4x45°
40.4
±0.25
4.5±0.5
38
0.25
65
40
Aufdruck der Typenbezeichnung
±0.2
32
23.8
5.5
5.5
15.415.4
2
2
0.5
28.8
7.4
3.4
4
16.4
28.8
2
M 2:1
(4)
Ø 2.1
Ø 2.5
Ø 6.1
1.5
6.0
Detail X
X
6
9
10
8
7
5
4
3
2
1
F
C
B
A
E
D
H
G
L
K
I
F
C
B
A
D
E
G
H
K
I
L
10
6
S
O
M
N
R
P
9
U
T
V
W
8
7
S
O
M
N
P
R
T
U
5
W
V
4
2
3
1
Y
M 5:1
Ø1.5 (DIN 46 431)
1.5 +0.6-0.3
0.5±0.2
Detail Y
Dimensions in mm (1 mm = 0.0394")
VUO 120
VUO 155
© 2007 IXYS All rights reserved
3 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
20071019a
p h a s e o u t
VUO 120
0.001 0.01 0.1 1
0
100
200
300
400
500
600
700
23456789110
10
3
10
4
0.0 0.5 1.0 1.5 2.0
0
30
60
90
120
150
0 20406080100120
0
50
100
150
0 20406080100120140
0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0 20 40 60 80 100 120 140
0
20
40
60
80
100
120
140
I
d(AV)M
T
C
A
V
A
°C °C
VUO 120
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 45°C
T
VJ
= 150°C
V
R
= 0 V
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
R
thKA
:
0.7 KW
1 KW
1.4 KW
2 KW
3 KW
5 KW
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.003521 0.01
2 0.1479 0.05
3 0.5599 0.14
4 0.2887 0.5
P1-P3P4-P4

VUO120-16NO1

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BRIDGE RECT 3P 1.6KV 121A V2-PAK
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