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VUO120-16NO1

P1-P3P4-P4
© 2007 IXYS All rights reserved
4 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
20071019a
p h a s e o u t
VUO 155
0.001 0.01 0.1 1
0
100
200
300
400
500
600
700
23456789110
10
3
10
4
0.0 0.5 1.0 1.5 2.0
0
30
60
90
120
150
0 20 40 60 80 100 120 140
0
50
100
150
0 20 40 60 80 100 120 140
0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0 20 40 60 80 100 120 140
0
20
40
60
80
100
120
140
160
180
I
d(AV)M
T
C
A
V
A
°C °C
VUO 155
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 45°C
T
VJ
= 150°C
V
R
= 0 V
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
R
thKA
:
0.7 KW
1 KW
1.4 KW
2 KW
3 KW
5 KW
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.002817 0.01
2 0.1183 0.05
3 0.4479 0.14
4 0.231 0.5
P1-P3P4-P4

VUO120-16NO1

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Description:
BRIDGE RECT 3P 1.6KV 121A V2-PAK
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