CM1213-06SM

© Semiconductor Components Industries, LLC, 2013
June, 2013 Rev. 5
1 Publication Order Number:
CM1213/D
CM1213
6 and 8-Channel
Low Capacitance ESD
Protection Arrays
Product Description
The CM1213 family of diode arrays has been designed to provide
ESD protection for electronic components or subsystems requiring
minimal capacitive loading. These devices are ideal for protecting
systems with high data and clock rates or for circuits requiring low
capacitive loading. Each ESD channel consists of a pair of diodes in
series which steer the positive or negative ESD current pulse to either
the positive (V
P
) or negative (V
N
) supply rail. A Zener diode is
embedded between V
P
and V
N
, offering two advantages. First, it
protects the V
CC
rail against ESD strikes, and second, it eliminates the
need for a bypass capacitor that would otherwise be needed for
absorbing positive ESD strikes to ground. The CM1213 will protect
against ESD pulses up to ±8 kV per the IEC 6100042 standard.
These devices are particularly wellsuited for protecting systems
using highspeed ports such as USB2.0, IEEE1394 (Firewire
®
,
iLinkt), Serial ATA, DVI, HDMI and corresponding ports in
removable storage, digital camcorders, DVDRW drives and other
applications where extremely low loading capacitance with ESD
protection are required in a small package footprint.
Features
6 or 8 Channels of ESD Protection
Note: For 1, 2, and 4 Channel Devices, See the CM1213A Datasheet
Provides ESD Protection to IEC6100042 Level 4
±8 kV Contact Discharge
Low Channel Input Capacitance of 1.0 pF Typical
Minimal Capacitance Change with Temperature and Voltage
Channel Input Capacitance Matching of 0.02 pF Typical is Ideal for
Differential Signals
Mutual Capacitance between Signal Pin and Adjacent Signal Pin
0.11 pF Typical
Zener Diode Protects Supply Rail and Eliminates the Need for
External Bypass Capacitors
Each I/O Pin Can Withstand Over 1000 ESD Strikes*
Available in SOIC and MSOP
These Devices are PbFree and are RoHS Compliant
Applications
USB2.0 Ports at 480 Mbps in Desktop PCs, Notebooks
and Peripherals
IEEE1394 Firewire
®
Ports at 400 Mbps / 800 Mbps
DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,
LCD Displays
Serial ATA Ports in Desktop PCs and Hard Disk Drives
PCI Express Ports
General Purpose Highspeed Data Line ESD Protection
Handheld PCs/PDAs
*Standard test condition is IEC6100042 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production
test to verify that all of the tested parameters are within spec after the 1000 strikes.
MSOP10
(PbFree)
Device Package Shipping
ORDERING INFORMATION
SOIC8
SM SUFFIX
CASE 751AC
BLOCK DIAGRAMS
http://onsemi.com
CM121306SM SOIC8
(PbFree)
2500/Tape & Reel
CH6 V
P
V
N
CH5 CH4
CH1 CH2 CH3
CM121306SM
CM121306MR
CM121308MR
CH8 V
P
V
N
CH2CH1 CH4CH3
CH7 CH6 CH5
MSOP8
(PbFree)
4000/Tape & ReelCM121306MR
4000/Tape & ReelCM121308MR
MSOP8
MR SUFFIX
CASE 846AD
MSOP10
MR SUFFIX
CASE 846AE
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
CM1213
http://onsemi.com
2
Table 1. PIN DESCRIPTIONS
6Channel, 8Lead MSOP8/SOIC8 Packages
Pin Name Type Description
1 CH1 I/O ESD Channel
2 CH2 I/O ESD Channel
3 V
N
GND Negative voltage supply rail
4 CH3 I/O ESD Channel
5 CH4 I/O ESD Channel
6 CH5 I/O ESD Channel
7 V
P
PWR Positive voltage supply rail
8 CH6 I/O ESD Channel
8Channel, 10Lead MSOP10 Package
Pin Name Type Description
1 CH1 I/O ESD Channel
2 CH2 I/O ESD Channel
3 CH3 I/O ESD Channel
4 CH4 I/O ESD Channel
5 V
N
GND Negative voltage supply rail
6 CH5 I/O ESD Channel
7 CH6 I/O ESD Channel
8 V
P
PWR Positive voltage supply rail
9 CH7 I/O ESD Channel
10 CH8 I/O ESD Channel
PACKAGE / PINOUT DIAGRAMS
Top View
CH1
CH4
V
N
V
P
8Lead SOIC8
1
2
3
4
8
7
6
5
D136
Top View
CH1
CH8
V
N
V
P
1
2
3
4
10
9
8
7
D138
56
10Lead MSOP10
CH2
CH3
CH5
CH6
Top View
CH1
CH4
V
N
V
P
8Lead MSOP8
1
2
3
4
8
7
6
5
D137
CH2
CH3
CH5
CH6
CH2
CH3
CH4
CH7
CH6
CH5
GENERIC MARKING DIAGRAMS
XXXXX = Lot Number
YY = Year
WW = Work Week
D137
XXXXX
YYWW
D138
XXXXX
YYWW
CM121306MR CM121308MRCM121306SM
D136
YYWW
XXXX
CM1213
http://onsemi.com
3
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Supply Voltage (V
P
V
N
) 6.0 V
Operating Temperature Range 40 to +85 °C
Storage Temperature Range 65 to +150 °C
DC Voltage at any channel input (V
N
0.5) to (V
P
+ 0.5) V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range 40 to +85 °C
Package Power Rating
MSOP8 Package (CM121306MR)
MSOP10 Package (CM121308MR)
SOIC8 Package (CM121306SM)
400
400
600
mW
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter Conditions Min Typ Max Units
V
P
Operating Supply Voltage (V
P
V
N
) 3.3 5.5 V
I
P
Operating Supply Current (V
P
V
N
) = 3.3 V 8.0
mA
V
F
Diode Forward Voltage
Top Diode
Bottom Diode
I
F
= 8 mA; T
A
= 25°C
0.60
0.60
0.80
0.80
0.95
0.95
V
I
LEAK
Channel Leakage Current T
A
= 25°C; V
P
= 5 V, V
N
= 0 V ±0.1 ±1.0
mA
C
IN
Channel Input Capacitance At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V 1.0 1.5 pF
DC
IN
Channel Input Capacitance Matching At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V 0.02 pF
C
MUTUAL
Mutual Capacitance between signal pin
and adjacent signal pin
At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V 0.11 pF
V
ESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 6100042 standard
T
A
= 25°C (Notes 3 and 4) ±8
kV
V
CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T
A
= 25°C, I
PP
= 1 A, t
P
= 8/20 mS
(Note 4)
+8.8
1.4
V
R
DYN
Dynamic Resistance
Positive Transients
Negative Transients
I
PP
= 1 A, t
P
= 8/20 mS
Any I/O pin to Ground (Note 4)
0.7
0.4
W
1. All parameters specified at T
A
= 40°C to +85°C unless otherwise noted.
2. Human Body Model per MILSTD883, Method 3015, C
Discharge
= 100 pF, R
Discharge
= 1.5 KW, V
P
= 3.3 V, V
N
grounded.
3. Standard IEC 6100042 with C
Discharge
= 150 pF, R
Discharge
= 330 W, V
P
= 3.3 V, V
N
grounded.
4. These measurements performed with no external capacitor on V
P
(V
P
floating).

CM1213-06SM

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS DIODE 3.3V 8.8V 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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